Sub-10 nm graphene nanoribbon array field-effect transistors fabricated by block copolymer lithography

Advanced Materials

Volumn 25, Issue 34, 2013, Pages 4723-4728

  Son, Jeong Gon ^a,b   Son, Myungwoo ^c   Moon, Kyeong Joo ^d   Lee, Byoung Hun ^c   Myoung, Jae Min ^d   Strano, Michael S ^a   Ham, Moon Ho ^c   Ross, Caroline A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b Korea Institute of Science and Technology   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

^d Yonsei University   (South Korea)

Author keywords

block copolymer; graphene; nanofabrication; nanoribbon; transistor

Indexed keywords

BLOCK COPOLYMER LITHOGRAPHY; DIRECTED SELF-ASSEMBLY; FLORY-HUGGINS INTERACTION PARAMETER; GRAPHENE NANO-RIBBON; LINE EDGE ROUGHNESS; NANORIBBON; POLYMERIC TEMPLATES; TEMPERATURE DEPENDENCE;

FIELD EFFECT TRANSISTORS; GRAPHENE; NANORIBBONS; NANOTECHNOLOGY; TRANSISTORS;

BLOCK COPOLYMERS;

BLOCK COPOLYMER; CARBON NANOTUBE; DIMETICONE; GRAPHENE; GRAPHITE; NANORIBBON; NYLON; POLY(DIMETHYLSILOXANE) POLYAMIDE COPOLYMER; POLY(DIMETHYLSILOXANE)-POLYAMIDE COPOLYMER;

ARTICLE; CHEMISTRY; NANOFABRICATION; PARTICLE SIZE; SEMICONDUCTOR;

BLOCK COPOLYMER; GRAPHENE; NANOFABRICATION; NANORIBBON; TRANSISTOR;

DIMETHYLPOLYSILOXANES; GRAPHITE; NANOTUBES, CARBON; NYLONS; PARTICLE SIZE; TRANSISTORS, ELECTRONIC;

EID: 84883815281     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201300813     Document Type: Article

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