On the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1996, Pages 44-54

  Degraeve, R ^a   Ogier, J L ^a   Bellens, R ^a   Roussel, Ph ^a   Groeseneken, G ^a   Maes, H E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ELECTRIC FIELD EFFECTS; FAILURE ANALYSIS; HIGH TEMPERATURE EFFECTS; PROBABILITY; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS; WEIBULL DISTRIBUTION;

MAXIMUM LIKELIHOOD ALGORITHMS; TIME DEPENDENT DIELECTRIC BREAKDOWN;

MOS DEVICES;

EID: 0029705787     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1996.492060     Document Type: Conference Paper

References (20)