Morphology change of Artificial Crystal Originated Particles, and the effect on gate oxide integrity

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 8 B, 2000, Pages

  Bearda, Twan ^b   Mertens, Paul W ^b   Heyns, Marc M ^b   Schmolke, Rüdiger ^a  

^a SILTRONIC AG   (Germany)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DEPOSITION; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; LEAKAGE CURRENTS; MORPHOLOGY; PARTICLES (PARTICULATE MATTER); POLISHING; SEMICONDUCTOR GROWTH;

CRYSTAL ORIGINATED PARTICLES;

SILICON WAFERS;

EID: 0034245125     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l841     Document Type: Article

References (17)

1. J. Ryuta, E. Morita, T. Tanaka and Y. Shimanuki: Jpn. J. Appl. Phys. 29 (1990) L1947.
2. R. Schmolke and D. Gräf: in Electrochem. Soc. Proc. (Electrochem. Soc., Pennington, NJ, 1999) Vol. 99-1, pp. 386-400.
3. M. Miyazaki, S. Miyazaki, T. Kitamura, Y. Yanase, T. Ochiai and H. Tsuya: Jpn. J. Appl. Phys. 36 (1997) 6187.
4. T. Bearda, M. Houssa, P. W. Mertens, J. Vanhellemont and M. M. Heyns: Appl. Phys. Lett. 75 (1999) 1255.
5. D. Gräf, R. Wahlich, P. Krottenthaler, D. Feijóo, U. Lambert and P. Wagner: Electrochem. Soc. Proc. (Electrochem. Soc., Pennington, NJ, USA, 1997) Vol. 97-22, pp. 18-31.
6. N. Yamada and H. Yamada-Kaneta: J. Electrochem. Soc. 145 (1998) 3628.
7. H. Shimizu, Y. Sugino, N. Suzuki, S. Kiyota, K. Nagasawa, M. Fujita, K. Takeda and S. Isomae: Jpn. J. Appl. Phys. 36 (1997) 2565.
8. R. Schmolke, D. Feijóo, R. Ostermeir, R. Schauer, S. Furukawa and D. Gräf: in Electrochem. Soc. Proc. (Electrochem. Soc., Pennington, NJ, USA, 1998) Vol. 98-1, pp. 855-866.
9. Y. Yanase, H. Nishihata, T. Ochiai and H. Tsuya: Jpn. J. Appl. Phys. 37 (1998) 1.
10. T. Bearda, P. W. Mertens, M. M. Heyns and R. Schmolke: Jpn. J. Appl. Phys. 38 (1999) L1509.
11. J. T. L. Thong, W. K. Choi and C. W. Chong: Sens. & Actuat. A63 (1997) 243.
12. H. Ishii, S. Shiratake, K. Oka, K. Motonami, T. Koyama and J. Izumitani: Jpn. J. Appl. Phys. 35 (1996) L1385.
13. T. Mera, J. Jablonski, M. Danbata, K. Nagai and M. Watanabe: Defects in Electronic Materials II (Mater. Res. Soc., Pittsburgh, PA, USA, 1997) Vol. 442, pp. 107-112.
14. T. Ueki, M. Itsumi and T. Takeda: Jpn. J. Appl. Phys. 38 (1999) 5695.
15. M. Tamatsuka, Z. Radzimski, G. A. Rozgonyi, S. Oka, M. Kato and Y. Kitagawara: Jpn. J. Appl. Phys. 37 (1998) 1236.
16. D.-B. Kao, J. P. McVittie, W. D. Nix and K. C. Saraswat: IEEE Trans. Electron Devices 34 (1987) 1008.
17. H. C. Lin, J. F. Ying, T. Yamanaka, S. J. Fang and C. R. Helms: J. Vac. Sci. & Technol. A 15 (1997) 790.