Synthesis and properties of turbostratically disordered, ultrathin WSe 2 films

Chemistry of Materials

Volumn 22, Issue 9, 2010, Pages 2750-2756

  Nguyen, Ngoc T ^a   Berseth, Polly A ^a   Lin, Qiyin ^a   Chiritescu, Catalin ^b   Cahill, David G ^b   Mavrokefalos, Anastassios ^c   Shi, Li ^c   Zschack, Paul ^d   Anderson, Michael D ^a,e   Anderson, Ian M ^e   Johnson, David C ^a  

^a UNIVERSITY OF OREGON   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c The University of Texas at Austin   (United States)

^d ARGONNE NATIONAL LABORATORY   (United States)

^e NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PRECURSORS; ANNEALING TIME; BASAL PLANES; BI-LAYER; COHERENCE LENGTHS; CRYSTALLINITIES; DIFFRACTION PEAKS; ELECTRICAL MEASUREMENT; GRAIN SIZE; LOW-ANGLE X RAY DIFFRACTION; POLE FIGURE; ROCKING CURVES; ROTATIONAL DISORDER; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SELF-ASSEMBLE; SEMICONDUCTING BEHAVIOR; STRUCTURAL UNIT; THICKNESS OF THE FILM; ULTRA-THIN;

SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; X RAY DIFFRACTION;

SEMICONDUCTING FILMS;

EID: 77951969966     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm903633w     Document Type: Article

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