Intrinsic surface passivation of CdTe

Journal of Applied Physics

Volumn 118, Issue 15, 2015, Pages

  Reese, M O ^a   Perkins, C L ^a   Burst, J M ^a   Farrell, S ^a   Barnes, T M ^a   Johnston, S W ^a   Kuciauskas, D ^a   Gessert, T A ^a   Metzger, W K ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM TELLURIDE; LASER SPECTROSCOPY; PASSIVATION; SURFACE ANALYSIS;

CHARACTERIZATION METHODS; POLYCRYSTALLINE FILM; RECONSTRUCTED SURFACES; SURFACE CONTAMINANTS; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS; SURFACE STOICHIOMETRY; TIME-RESOLVED SPECTROSCOPY;

SINGLE CRYSTALS;

EID: 84945384142     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4933186     Document Type: Article

References (63)

1. J. P. Ponpon, " A review of ohmic and rectifying contacts on cadmium telluride," Solid-State Electron. 28, 689-706 (1985). 10.1016/0038-1101(85)90019-X
2. R. Cohen, V. Lyahovitskaya, E. Poles, A. Liu, and Y. Rosenwaks, " Unusually low surface recombination velocity and long bulk lifetime in n-CdTe single crystals," Appl. Phys. Lett. 73, 1400-1402 (1998). 10.1063/1.122169
3. W. K. Metzger, D. Albin, D. Levi, P. Sheldon, B. M. Keyes, and R. K. Arhenkiel, " Time-resolved photoluminescence studies of CdTe solar cells," J. Appl. Phys. 94, 3549-3555 (2003). 10.1063/1.1597974
4. D. Kuciauskas, J. N. Duenow, A. Kanevce, J. V. Li, M. R. Young, P. Dippo, and D. Levi, " Optical-fiber-based, time-resolved photoluminescence spectrometer for thin-film absorber characterization and analysis of TRPL data for CdS/CdTe interface," in Proceedings of 38th IEEE PVSC (2011), pp. 001721-001726.
5. L. Jastrzebski, J. Lagowski, and H. C. Gatos, " Application of scanning electronic microscopy to determination of surface recombination velocity: GaAs," Appl. Phys. Lett. 27, 537-539 (1975). 10.1063/1.88276
6. S. R. Lunt, G. N. Ryba, P. G. Santangelo, and N. S. Lewis, " Chemical Studies of the passivation of GaAs surface recombination using sulfides and thiols," J. Appl. Phys. 70, 7449-7467 (1991). 10.1063/1.349741
7. T. Lauinger, J. Schmidt, A. G. Aberle, and R. Hezel, " Record low surface recombination velocities on 1 Ω cm p-silicon using remote plasma silicon nitride passivation," Appl. Phys. Lett. 68, 1232-1234 (1996). 10.1063/1.115936
8. 3," Appl. Phys. Lett. 89, 042112 (2006). 10.1063/1.2240736
9. E. Yablonovitch, D. L. Allara, C. C. Chang, T. Gmitter, and T. B. Bright, " Unusually low surface-recombination velocity on silicon and germanium surfaces," Phys. Rev. Lett. 57, 249-252 (1986). 10.1103/PhysRevLett.57.249
10. A. G. Aberle, " Surface passivation of crystalline Si solar cells: A review," Prog. Photovolt.: Res. Appl. 8, 473-487 (2000). 10.1002/1099-159X(200009/10)8:5<473::AID-PIP337>3.0.CO;2-D
11. 0.5P/GaAs heterointerfaces," Appl. Phys. Lett. 55, 1208-1210 (1989). 10.1063/1.101656
12. J. M. Olson, S. R. Kurtz, A. E. Kibbler et al., " In recent advances in high efficiency GaInP2/GaAs tandem solar cells," in Proceedings of IEEE 21st PVSC, Kissismee, FL (1990), pp. 24-20.
13. See http://www.firstsolar.com for information on the leading CdTe company in the world, which at the time of publishing this article had the lowest unsubsidized production cost per watt of any PV technology in the world and was producing >2-GW/yr (accessed June 14, 2014).
14. See http://www.greentechmedia.com/articles/read/the-global-pv-manufacturing-landscape-in-2012-and-beyond-a-brave-new-world for Fig. 6 which illustrates the point (accessed June 26, 2014).
15. M. A. Green, K. Emery, D. L. King, S. Igari, and W. Warta, " Solar cell efficiency tables (version 19)," Prog. Photovolt.: Res. Appl. 10, 55-61 (2002). 10.1002/pip.428
16. M. A. Green, K. Emery, Y. Hishikawa, W. Warta, and E. D. Dunlop, " Solar cell efficiency tables (version 39)," Prog. Photovolt.: Res. Appl. 20, 12-20 (2012). 10.1002/pip.2163
17. M. A. Green, K. Emery, Y. Hishikawa, W. Warta, and E. D. Dunlop, " Solar cell efficiency tables (version 40)," Prog. Photovolt.: Res. Appl. 20, 606-614 (2012). 10.1002/pip.2267
18. M. A. Green, K. Emery, Y. Hishikawa, W. Warta, and E. D. Dunlop, " Solar cell efficiency tables (version 41)," Prog. Photovolt.: Res. Appl. 21, 1-11 (2013). 10.1002/pip.2352
19. M. A. Green, K. Emery, Y. Hishikawa, W. Warta, and E. D. Dunlop, " Solar cell efficiency tables (version 42)," Prog. Photovolt.: Res. Appl. 21, 827-837 (2013). 10.1002/pip.2404
20. M. A. Green, K. Emery, Y. Hishikawa, W. Warta, and E. D. Dunlop, " Solar cell efficiency tables (version 45)," Prog. Photovolt.: Res. Appl. 23, 1-9 (2015). 10.1002/pip.2573
21. A. Kanevce and T. A. Gessert, " Optimizing CdTe solar cell performance: impact of variations in minority-carrier lifetime and carrier density profile," IEEE J. Photovolt. 1, 99-103 (2011). 10.1109/JPHOTOV.2011.2164952
22. J. Sites and J. Pan, " Strategies to increase CdTe solar-cell voltage," Thin Sol. Films 515, 6099-6102 (2007). 10.1016/j.tsf.2006.12.147
23. J. N. Duenow, J. M. Burst, D. S. Albin, D. Kuciauskas, S. W. Johnston, R. C. Reedy, and W. K. Metzger, " Single-crystal CdTe solar cells with Voc greater than 900 mV," Appl. Phys. Lett. 105, 053903 (2014). 10.1063/1.4892401
24. V. Lyahovitskaya, L. Chernyak, J. Greenberg, L. Kaplan, and D. Cahen, " Low temperature, postgrowth self-doping of CdTe single crystals due to controlled deviation from stoichiometry," J. Appl. Phys. 88, 3976-3981 (2000). 10.1063/1.1308065
25. T. A. Gessert, S.-H. Wei, J. Ma, D. S. Albin, R. G. Dhere, J. N. Duenow, D. Kuciauskas, A. Kanevce, T. M. Barnes, J. M. Burst, W. L. Rance, M. O. Reese, and H. R. Moutinho, " Research strategies toward improving thin-film CdTe photovoltaic devices beyond 20% conversion efficiency," Sol. Energy Mater. Sol. Cells 119, 149-155 (2013). 10.1016/j.solmat.2013.05.055
26. J. D. Major, Y. Y. Proskuryakov, and K. Durose, " Impact of cadmium-rich back surfaces on cadmium chloride treatment and device performance in close space sublimation deposited CdTe solar cells," in Proceedings of IEEE 37th PVSC (2011), pp. 3537-3541.
27. Y. Y. Proskuryakov, K. Durose, B. M. Taele, G. P. Welch, and S. Oelting, " Admittance spectroscopy of CdTe/CdS solar cells subjected to varied nitric-phosphoric etching conditions," J. Appl. Phys. 101, 014505 (2007). 10.1063/1.2402961
28. C. S. Ferekides, D. Marinskiy, V. Viswanathan, B. Tetali, V. Palekis, P. Selvaraj, and D. L. Morel, " High efficiency CSS CdTe solar cells," Thin Solid Films 361, 520-526 (2000). 10.1016/S0040-6090(99)00824-X
29. D. Bonnet, " Manufacturing of CSS CdTe solar cells," Thin Solid Films 361, 547-552 (2000). 10.1016/S0040-6090(99)00831-7
30. D. L. B�tzner, A. Romeo, H. Zogg, R. Wendt, and A. N. Tiwari, " Development of efficient and stable back contacts on CdTe/CdS solar cells," Thin Solid Films 387, 151-154 (2001). 10.1016/S0040-6090(01)00792-1
31. S. S. Hegedus and B. E. McCandless, " CdTe contacts for CdTe/CdS solar cells: effect of Cu thickness, surface preparation and recontacting on device performance and stability," Sol. Energy Mater. Sol. Cells 88, 75-95 (2005). 10.1016/j.solmat.2004.10.010
32. A. J. Nelson and D. Levi, " Novel method for growing CdS on CdTe surfaces for passivation of surface states and heterojunction formation," J. Vac. Sci. Technol. A 15, 1119-1123 (1997). 10.1116/1.580440
33. x on the current-voltage characteristics of contacts," Semiconductors 40, 1048-1051 (2006). 10.1134/S1063782606090107
34. Y.-H. Kim, S.-Y. An, J.-Y. Lee, I. Kim, and K.-N. Oh, " Photoluminescence study on the effects of the surface of CdTe by surface passivation," J. Appl. Phys. 85, 7370-7373 (1999). 10.1063/1.369364
35. T. L. Chu, S. S. Chu, and S. T. Ang, " Surface passivation and oxidation of cadmium telluride and properties of metal oxide CdTe structures," J. Appl. Phys. 58, 3206-3210 (1985). 10.1063/1.335830
36. J. Ma, D. Kuciauskas, D. Albin, R. Bhattacharya, M. Reese, T. Barnes, J. V. Li, T. Gessert, and S-H. Wei, " Dependence of the minority-carrier lifetime on the stoichiometry of CdTe using time-resolved photoluminescence and first-principles calculations," Phys. Rev. Lett. 111, 067402-067406 (2013). 10.1103/PhysRevLett.111.067402
37. S.-H. Wei and S. B. Zhang, Phys. Rev. B 66, 155211 (2002). 10.1103/PhysRevB.66.155211
38. T. A. Gessert, J. M. Burst, S.-H. Wei, J. Ma, D. Kuciauskas, W. L. Rance, T. M. Barnes, J. N. Duenow, M. O. Reese, J. V. Li, M. R. Young, and P. Dippo, " Pathways toward higher performance CdS/CdTe devices: Te exposure of CdTe surface before ZnTe:Cu/Ti contacting," Thin Solid Films 535, 237-240 (2013). 10.1016/j.tsf.2012.11.087
39. xTe precipitation and effect on ionization potential," J. Appl. Phys. 102, 034504 (2007). 10.1063/1.2759876
40. D. W. Niles, X. Li, P. Sheldon, and H. H�chst, " A photoemission determination of the band diagram of the Te/CdTe interface," J. Appl. Phys. 77, 4489-4493 (1995). 10.1063/1.359444
41. Y. Nemirovsky and G. Bahir, " Passivation of mercury cadmium telluride surfaces," J. Vac. Sci. Technol. A 7, 450-459 (1989). 10.1116/1.576202
42. E. Finkman and S. E. Schacham, " Surface recombination velocity studies of anodic sulfide and ZnS coated HgCdTe," J. Vac. Sci. Technol. A 7, 464-468 (1989). 10.1116/1.576204
43. C. K. Kang, Sh. U. Yuldashev, J. H. Leem, Y. S. Ryu, J. K. Hyun, H. S. Jung, H. J. Kim, T. W. Kang, H. I. Lee, Y. D. Woo, and T. W. Kim, " Surface passivation by sulfur treatment of undoped p-type CdTe (100)," J. Appl. Phys. 88, 2013-2015 (2000). 10.1063/1.1305551
44. M. O. Reese, J. M. Burst, C. L. Perkins, A. Kanevce, S. W. Johnston, D. Kuciauskas, T. M. Barnes, and W. K. Metzger, " Surface passivation of CdTe Single Crystals," IEEE J. Photovolt. 5, 382-385 (2015). 10.1109/JPHOTOV.2014.2362298
45. H. Wang, K. S. Wong, B. A. Foreman, Z. Y. Yang, and G. K. L. Wong, " One- and two-photon-excited-time-resolved photoluminescence investigations of bulk and surface recombination dynamics in ZnSe," J. Appl. Phys. 83, 4773-4776 (1998). 10.1063/1.367268
46. D. Kuciauskas, A. Kanevce, J. M. Burst, J. N. Duenow, R. Dhere, D. S. Albin, D. H. Levi, and R. K. Ahrenkiel, " Minority carrier lifetime analysis in the bulk of thin-film absorbers using subbandgap (two-photon) excitation," IEEE J. Photovolt. 3, 1319-1324 (2013). 10.1109/JPHOTOV.2013.2270354
47. E. S. Bernard, E. T. Hoke, S. T. Connor, J. R. Groves, T. Kuykendall, Z. Yan, E. C. Samulon, E. D. Bourret-Courchesne, S. Aloni, P. J. Schuck, C. H. Peters, and B. E. Hardin, " Probing carrier lifetimes in photovoltaic materials using subsurface two-photon microscopy," Sci. Rep. 3, 2098-2106 (2013). 10.1038/srep02098
48. E. D. Palik and G. Ghosh, Handbook of Optical Constants of Solids (Elsevier Science Publishing Co Inc, 1998).
49. R. K. Ahrenkiel and J. Dashdorj, " Interface recombination velocity measurements by a contactless microwave technique," J. Vac. Sci. Technol. B 22, 2063-2067 (2004). 10.1116/1.1768523
50. C. L. Perkins and L. S. Hasoon, " Surfactant-assisted growth of CdS thin films for photovoltaic applications," J. Vac. Sci. Technol. A 24, 497-504 (2006). 10.1116/1.2194929
51. B. Stafford, Private communication, University of Illinois, Chicago (2015).
52. J. F. S. W. F. Moulder, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer Corporation, Eden Prairie, 1992).
53. L. S. Hirsch, Z. Yu, S. L. Buczkowski, T. H. Myers, and M. R. Richards-Babb, " The use of atomic hydrogen for substrate cleaning for subsequent growth of II-VI semiconductors," J. Electron. Mater. 26, 534-541 (1997). 10.1007/s11664-997-0190-9
54. A. J. Ricco, H. S. White, and M. S. Wrighton, " X-ray photoelectron and Auger electron spectroscopic study of the CdTe surface resulting from various surface pretreatments: Correlation of photoelectrochemical and capacitance potential behavior with surface chemical composition," J. Vac. Sci. Technol. A 2, 910-915 (1984). 10.1116/1.572547
55. W. J. Danaher, L. E. Lyons, M. Marychurch, and G. C. Morris, " Chemical etching of crystal and thin film cadmium telluride," Appl. Surf. Sci. 27, 338-354 (1986). 10.1016/0169-4332(86)90138-8
56. L. Shcherbak, O. Kopach, P. Fochuk, A. E. Bolotnikov, and R. B. James, " Empirical correlations between the Arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals," J. Phase Equilib. Diff. 36, 99-109 (2015). 10.1007/s11669-015-0364-8
57. J. M. Burst, M. O. Reese, D. S. Albin, S. B. Farrell, J. N. Duenow, T. Ablekim, S. K. Swain, K. G. Lynn, D. Kuciauskas, and W. K. Metzger, " Resetting the defect chemistry in CdTe to overcome longstanding stability and photovoltage limits," (unpublished).
58. J. C. Green, " Photoelectron spectroscopy study of valence bands in solids," Ann. Rev. Phys. Chem. 28, 161-183 (1977). 10.1146/annurev.pc.28.100177.001113
59. D. Kuciauskas, A. Kanevce, P. Dippo, S. Seyedmohammadi, and R. Malik, " Minority-carrier lifetime and surface recombination velocity in single-crystal CdTe," IEEE J. Photovolt. 5, 366-371 (2015). 10.1109/JPHOTOV.2014.2359738
60. W. M�nch, Semiconductor Surfaces and Interfaces, 3rd ed. (Springer, 2001), p. 162.
61. M. Ahr and M. Biehl, " Flat (0 0 1) surfaces of II-VI semiconductors: a lattice gas model," Surf. Sci. 505, 124-136 (2002). 10.1016/S0039-6028(02)01145-7
62. I. M. Dharmadasa, " Recent developments and progress on electrical contacts to CdTe, CdS, and ZnSe with special reference to barrier contacts to CdTe," Prog. Cryst. Growth Charact. 36, 249-290 (1998). 10.1016/S0960-8974(98)00010-2
63. S. C. Boehme, J. M. Azpiroz, Y. Aulin, F. C. Grozema, D. Vanmaekelbergh, L. D. A. Siebbles, I. Infante, and A. J. Houtepen, " Density of trap states and Auger-mediated electron trapping in CdTe quantum-dot solids," Nano. Lett. 15, 3056 (2015). 10.1021/acs.nanolett.5b00050