메뉴 건너뛰기




Volumn 3, Issue , 2013, Pages

Probing carrier lifetimes in photovoltaic materials using subsurface two-photon microscopy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84906781540     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep02098     Document Type: Article
Times cited : (77)

References (31)
  • 2
    • 0026840042 scopus 로고
    • Measurement of minority-carrier lifetime by time-resolved photoluminescence
    • Ahrenkiel, R. K. Measurement of minority-carrier lifetime by time-resolved photoluminescence. Solid-State Electronics 35, 239-250 (1992).
    • (1992) Solid-State Electronics , vol.35 , pp. 239-250
    • Ahrenkiel, R.K.1
  • 3
    • 0030399938 scopus 로고    scopus 로고
    • Quasi-steady-state photoconductance, a new method for solar cell material and device characterization
    • Sinton, R. A., Cuevas, A. & Stuckings, M. Quasi-steady-state photoconductance, a new method for solar cell material and device characterization. IEEE Phot. Spec. Conf. 457-460 (1996). doi:10.1109/PVSC.1996.564042.
    • (1996) IEEE Phot. Spec. Conf , pp. 457-460
    • Sinton, R.A.1    Cuevas, A.2    Stuckings, M.3
  • 4
    • 77957661672 scopus 로고    scopus 로고
    • Comparison of techniques for measuring carrier lifetime in thin-film and multicrystalline photovoltaic materials
    • Ahrenkiel, R. K., Call, N., Johnston, S. W. & Metzger, W. K. Comparison of techniques for measuring carrier lifetime in thin-film and multicrystalline photovoltaic materials. Sol. Energ. Mat. Sol. 94, 2197-2204 (2010).
    • (2011) Sol. Energ. Mat. Sol , vol.94 , pp. 2197-2204
    • Ahrenkiel, R.K.1    Call, N.2    Johnston, S.W.3    Metzger, W.K.4
  • 5
    • 0141522625 scopus 로고    scopus 로고
    • Time-resolved photoluminescence studies of CdTe solar cells
    • Metzger, W. K. et al. Time-resolved photoluminescence studies of CdTe solar cells. J. Appl. Phys. 94, 3549-3555 (2003).
    • (2003) J. Appl. Phys , vol.94 , pp. 3549-3555
    • Metzger, W.K.1
  • 6
    • 0018059542 scopus 로고
    • Minority-carrier lifetimes and internal quantum efficiency of surface-free GaAs
    • Nelson, R. J. & Sobers, R. G. Minority-carrier lifetimes and internal quantum efficiency of surface-free GaAs. J. Appl. Phys. 49, 6103-6108 (1978).
    • (1978) J. Appl. Phys , vol.49 , pp. 6103-6108
    • Nelson, R.J.1    Sobers, R.G.2
  • 7
    • 0012028282 scopus 로고
    • Ultralong minority-carrier lifetime epitaxial GaAs by photon recycling
    • Ahrenkiel, R. K. et al. Ultralong minority-carrier lifetime epitaxial GaAs by photon recycling. Appl. Phys. Lett. 55, 1088-1090 (1989).
    • (1989) Appl. Phys. Lett , vol.55 , pp. 1088-1090
    • Ahrenkiel, R.K.1
  • 8
    • 47549106665 scopus 로고    scopus 로고
    • Long lifetimes in high-efficiency Cu(In,Ga)Se2 solar cells
    • Metzger, W. K., Repins, I. L. & Contreras, M. A. Long lifetimes in high-efficiency Cu(In,Ga)Se2 solar cells. Appl. Phys. Lett. 93, 022110 (2008).
    • (2008) Appl. Phys. Lett , vol.93 , pp. 022110
    • Metzger, W.K.1    Repins, I.L.2    Contreras, M.A.3
  • 9
    • 62549101992 scopus 로고    scopus 로고
    • An optical technique for measuring surface recombination velocity
    • Ahrenkiel, R. K. & Johnston, S. W. An optical technique for measuring surface recombination velocity. Sol. Energ. Mat. Sol. 93, 645-649 (2009).
    • (2009) Sol. Energ. Mat. Sol , vol.93 , pp. 645-649
    • Ahrenkiel, R.K.1    Johnston, S.W.2
  • 10
    • 33749031265 scopus 로고    scopus 로고
    • Characterization of Cu(InGa)Se2 thin films by time-resolved photoluminescence
    • Shimakawa, S. et al. Characterization of Cu(In,Ga)Se2 thin films by time-resolved photoluminescence. Phys. status solidi (a) 203, 2630-2633 (2006).
    • (2006) Phys. Status Solidi (A , vol.203 , pp. 2630-2633
    • Shimakawa, S.1
  • 12
    • 0025342635 scopus 로고
    • Two-photon laser scanning fluorescence microscopy
    • Denk, W., Strickler, J. & Webb, W. Two-photon laser scanning fluorescence microscopy. Science 248, 73-76 (1990).
    • (1990) Science , vol.248 , pp. 73-76
    • Denk, W.1    Strickler, J.2    Webb, W.3
  • 13
    • 27744542386 scopus 로고    scopus 로고
    • A novel fluorophore for two-photon-excited single-molecule fluorescence
    • Schuck, P. J., Willets, K. A., Fromm, D. P., Twieg, R. J. & Moerner, W. E. A novel fluorophore for two-photon-excited single-molecule fluorescence. Chem. Phys. 318, 7-11 (2005).
    • (2005) Chem. Phys , vol.318 , pp. 7-11
    • Schuck, P.J.1    Willets, K.A.2    Fromm, D.P.3    Twieg, R.J.4    Moerner, W.E.5
  • 14
    • 30944450665 scopus 로고    scopus 로고
    • Deep tissue two-photon microscopy
    • Helmchen, F. & Denk, W. Deep tissue two-photon microscopy. Nat. Meth. 2, 932-940 (2005).
    • (2005) Nat. Meth , vol.2 , pp. 932-940
    • Helmchen, F.1    Denk, W.2
  • 15
    • 33750437716 scopus 로고    scopus 로고
    • Carrier recombination and diffusion in GaN revealed by transient luminescence under one-photon and two-photon excitations
    • Jursenas, S. et al. Carrier recombination and diffusion in GaN revealed by transient luminescence under one-photon and two-photon excitations. Appl. Phys. Lett. 89, 172119-172119-3 (2006).
    • (2006) Appl. Phys. Lett , vol.89 , pp. 172119-1721193
    • Jursenas, S.1
  • 16
    • 79956009668 scopus 로고    scopus 로고
    • Crosssectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence
    • Schuck, P. J., Grober, R. D., Roskowski, A. M., Einfeldt, S. & Davis, R. F. Crosssectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence. Appl. Phys. Lett. 81, 1984-1986 (2002).
    • (2002) Appl. Phys. Lett , vol.81 , pp. 1984-1986
    • Schuck, P.J.1    Grober, R.D.2    Roskowski, A.M.3    Einfeldt, S.4    Davis, R.F.5
  • 17
    • 0034206888 scopus 로고    scopus 로고
    • Modeling and measuring the effect of refraction on the depth resolution of confocal raman microscopy
    • Everall, N. J. Modeling and Measuring the Effect of Refraction on the Depth Resolution of Confocal Raman Microscopy. Appl. Spectrosc. 54, 773-782 (2000).
    • (2000) Appl. Spectrosc , vol.54 , pp. 773-782
    • Everall N. ., J.1
  • 19
    • 0038532913 scopus 로고
    • Picosecond time-resolved luminescence studies of surface and bulk recombination processes in InP
    • Rosenwaks, Y., Shapira, Y.& Huppert, D. Picosecond time-resolved luminescence studies of surface and bulk recombination processes in InP. Phys. Rev. B 45, 9108-9119 (1992).
    • (1992) Phys. Rev. B , vol.45 , pp. 9108-9119
    • Rosenwaks, Y.1    Shapira, Y.2    Huppert, D.3
  • 20
    • 33749367859 scopus 로고    scopus 로고
    • Cathodoluminescence mapping and selective etching of defects in bulk GaN
    • Lu, H. et al. Cathodoluminescence mapping and selective etching of defects in bulk GaN. J. Cryst. Growth 291, 82-85 (2006).
    • (2006) J. Cryst. Growth , vol.291 , pp. 82-85
    • Lu, H.1
  • 21
    • 0001007641 scopus 로고
    • Excitation-power dependence of the near-band-edge photoluminescence of semiconductors
    • Schmidt, T., Lischka, K. & Zulehner, W. Excitation-power dependence of the near-band-edge photoluminescence of semiconductors. Phys. Rev. B 45, 8989-8994 (1992).
    • (1992) Phys. Rev B , vol.45 , pp. 8989-8994
    • Schmidt, T.1    Lischka, K.2    Zulehner, W.3
  • 22
    • 0242671180 scopus 로고    scopus 로고
    • Unusually low surface recombination and long bulk lifetime in n-CdTe single crystals
    • Cohen, R., Lyahovitskaya, V., Poles, E., Liu, A. & Rosenwaks, Y. Unusually low surface recombination and long bulk lifetime in n-CdTe single crystals. Appl. Phys. Lett. 73, 1400 (1998).
    • (1998) Appl. Phys. Lett , vol.73 , pp. 1400
    • Cohen, R.1    Lyahovitskaya, V.2    Poles, E.3    Liu, A.4    Rosenwaks, Y.5
  • 24
    • 36549100750 scopus 로고
    • Efficiency calculations of thin-film GaAs solar cells on Si substrates
    • Yamaguchi, M. & Amano, C. Efficiency calculations of thin-film GaAs solar cells on Si substrates. J. Appl. Phys. 58, 3601-3606 (1985).
    • (1985) J. Appl. Phys , vol.58 , pp. 3601-3606
    • Yamaguchi, M.1    Amano, C.2
  • 25
    • 0025402023 scopus 로고
    • Minority carrier lifetime ofgaas on silicon
    • Ahrenkiel, R. K. et al.Minority Carrier Lifetime ofGaAs on Silicon. J. Electrochem. Soc. 137, 996-1000 (1990).
    • (1990) J. Electrochem. Soc , vol.137 , pp. 996-1000
    • Ahrenkiel, R.K.1
  • 28
    • 84861038572 scopus 로고    scopus 로고
    • Comparison of minority carrier lifetime measurements in superstrate and substrate CdTe PV devices
    • Gessert, T. A. et al. Comparison of minority carrier lifetime measurements in superstrate and substrate CdTe PV devices. IEEE Phot. Spec. Conf. 001271-001274 (2011). doi:10.1109/PVSC.2011.6186189.
    • (2011) IEEE Phot. Spec. Conf , pp. 001271-001274
    • Gessert, T.A.1
  • 30
    • 0035948103 scopus 로고    scopus 로고
    • High spatial resolution subsurface microscopy
    • Ippolito, S. B., Goldberg, B. B. & U nlu, M. S. High spatial resolution subsurface microscopy. Appl. Phys. Lett. 78, 4071-4073 (2001).
    • (2001) Appl. Phys. Lett , vol.78 , pp. 4071-4073
    • Ippolito, S.B.1    Goldberg, B.B.2    Unlu, M.S.3
  • 31
    • 0027503192 scopus 로고
    • Aberrations in confocal fluorescence microscopy induced by mismatches in refractive index
    • Hell, S., Reiner, G., Cremer, C. & Stelzer, E. H. K. Aberrations in confocal fluorescence microscopy induced by mismatches in refractive index. J. Microsc. 169, 391-405 (1993).
    • (1993) J. Microsc , vol.169 , pp. 391-405
    • Hell, S.1    Reiner, G.2    Cremer, C.3    Stelzer, E.H.K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.