Low temperature, postgrowth self-doping of CdTe single crystals due to controlled deviation from stoichiometry

Journal of Applied Physics

Volumn 88, Issue 7, 2000, Pages 3976-3981

  Lyahovitskaya, V ^a   Chernyak, L ^b   Greenberg, J ^c   Kaplan, L ^a   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

^c HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347607301     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1308065     Document Type: Article

References (26)

1. E. D. Jones and J. C. Clark, in Properties of Narrow Gap Cadmium-Based Compounds, EMIS Datareviews Series, edited by P. Capper (INSPEC, IEE, London, 1994), p. 472.
2. V. Lyahovitskaya, L. Kaplan, J. Goswami, and D. Cahen, J. Cryst. Growth 197, 106 (1999).
3. A. A. Alnajjar, C. C. R. Watson, A. W. Brinkman, and K. Durose, J. Cryst. Growth 117, 385 (1992).
4. M. G. Astles, in Ref. 1, p. 494.
5. T. Aramoto, S. Kumazawa, H. Higuchi, T. Arita, S. Shibutani, T. Nishio, J. Nakajima, M. Tsuji, A. Hanafusa, T. Hibino, K. Omura, H. Ohyama, and M. Murozono, Jpn. J. Appl. Phys., Part 1 36, 6304 (1997).
6. Y. Marfaing, Rev. Phys. Appl. 12, 211 (1977).
7. U. V. Desnica, Prog. Cryst. 36, 291 (1998).
8. P. Capper, in Ref. 1 p. 489.
9. R. Triboulet, A. Durant, P. Gall, J. Booafe, J. P. Fillard, and S. K. Krawczyk, J. Cryst. Growth 117, 227 (1992).
10. R. Triboulet and Y. Marfaing, J. Cryst. Growth 51, 89 (1981).
11. K. Yokota, S. Katayama, and T. Yoshikawa, Jpn. J. Appl. Phys., Part I 21, 456 (1982).
12. M. Wienecke, H. Berger, and M. Schenk, Mater. Sci. Eng., B 16, 219 (1993); M. Wienecke, B. Reinhold, and S. Hermann, J. Cryst. Growth 204, 441 (1999).
13. M. Wienecke, H. Berger, and M. Schenk, Mater. Sci. Eng., B 16, 219 (1993); M. Wienecke, B. Reinhold, and S. Hermann, J. Cryst. Growth 204, 441 (1999).
14. M. A. Berding, Appl. Phys. Lett. 74, 552 (1999).
15. Q. Chen, M. Hillert, B. Sundman, W. A. Oates, S. G. Fries, and R. Schid-Fetzer, J. Electron. Mater. 27, 961 (1998).
16. L. Kronik and Y. Shapira, Surf. Sci. Rep. 37, 1 (1999).
17. K. Sholz, H. Stiens, and G. Müller-Vogt, J. Cryst. Growth 197, 586 (1999).
18. J. C. Brice, Prog. Cryst. 13, 39 (1986).
19. J. H. Greenberg, V. N. Guskov, V. B. Lazarev, and O. V. Shebershneva, Mater. Res. Bull. 27, 847 (1992); J. H. Greenberg, V. N. Guskov, V. B. Lazarev, and O. V. Shebershneva, J. Solid State Chem. 102, 382 (1993); J. H. Greenberg, J. Cryst. Growth 161, 1 (1996).
20. J. H. Greenberg, V. N. Guskov, V. B. Lazarev, and O. V. Shebershneva, Mater. Res. Bull. 27, 847 (1992); J. H. Greenberg, V. N. Guskov, V. B. Lazarev, and O. V. Shebershneva, J. Solid State Chem. 102, 382 (1993); J. H. Greenberg, J. Cryst. Growth 161, 1 (1996).
21. J. H. Greenberg, V. N. Guskov, V. B. Lazarev, and O. V. Shebershneva, Mater. Res. Bull. 27, 847 (1992); J. H. Greenberg, V. N. Guskov, V. B. Lazarev, and O. V. Shebershneva, J. Solid State Chem. 102, 382 (1993); J. H. Greenberg, J. Cryst. Growth 161, 1 (1996).
22. J. H. Greenberg, J. Cryst. Growth 197, 406 (1999).
23. P. Rudolph, Prog. Cryst. 29, 375 (1994).
24. V. Lyahovitskaya et al. (unpublished).
25. J. C. Clark and E. D. Jones, in Ref. 1 , p. 459.
26. S. M. Sze, Semiconductor Devices: Physics and Technology (Wiley, New York, 1985).