Photoluminescence study on the effects of the surface of CdTe by surface passivation

Journal of Applied Physics

Volumn 85, Issue 10, 1999, Pages 7370-7373

  Kim, Young Hun ^a   An, Se Young ^a   Lee, Ju Young ^a   Kim, InJae ^a   Oh, Ki Nam ^a   Kim, Sun Ung ^a   Park, Mann Jang ^a   Lee, Tae Seok ^b  

^a Korea University   (South Korea)

^b Agency for Defence Development   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; DIELECTRIC MATERIALS; ELECTRON TRAPS; ENERGY GAP; ETCHING; MORPHOLOGY; PASSIVATION; PHOTOLUMINESCENCE; SOLUTIONS; SURFACE STRUCTURE;

DONOR-ACCEPTOR PAR (DAP);

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0032613484     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369364     Document Type: Article

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