Novel method for growing CdS on CdTe surfaces for passivation of surface states and heterojunction formation

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 1119-1123

  Nelson, Art J ^a   Levi, Dean ^b  

^a Department of Geology and Geological Engineering   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CDS; CDS/CDTE; CDTE; CHEMICAL ENVIRONMENT; COMPOSITIONAL DEPTH PROFILING; CORE LEVELS; HETEROJUNCTION DEVICES; HIGH RESOLUTION; IN-SITU; LARGE-GRAIN; NEAR SURFACE REGIONS; NOVEL METHODS; PLASMA PROCESSING; POLYCRYSTALLINE; SURFACE RECOMBINATION VELOCITIES; SURFACE STATE; TIME-RESOLVED PHOTOLUMINESCENCE; X-RAY PHOTOEMISSIONS;

AUGER ELECTRON SPECTROSCOPY; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CADMIUM SULFIDE; DEPTH PROFILING; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; PASSIVATION; PLASMA DEVICES; SURFACE STRUCTURE; TELLURIUM COMPOUNDS; BAND STRUCTURE; HETEROJUNCTIONS; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE TREATMENT; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

HETEROJUNCTIONS; SEMICONDUCTING CADMIUM COMPOUNDS;

CADMIUM TELLURIDE; SURFACE RECOMBINATION VELOCITY;

EID: 0031146936     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580440     Document Type: Article

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