Admittance spectroscopy of CdTeCdS solar cells subjected to varied nitric-phosphoric etching conditions

Journal of Applied Physics

Volumn 101, Issue 1, 2007, Pages

  Proskuryakov, Y Y ^a   Durose, K ^a   Taele, B M ^a   Welch, G P ^a   Oelting, S ^b  

^a DURHAM UNIVERSITY   (United Kingdom)

^b ANTEC Solar Energy AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC ADMITTANCE; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ETCHING; GRAIN BOUNDARIES; NITRIC ACID; SEMICONDUCTING CADMIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS;

ADMITTANCE SPECTROSCOPY; ARRHENIUS ENERGY PLOTS; BACK-CONTACT BARRIER; VALENCE BAND;

SOLAR CELLS;

EID: 33846271087     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2402961     Document Type: Article

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