Minority-carrier lifetime and surface recombination velocity in single-crystal CdTe

IEEE Journal of Photovoltaics

Volumn 5, Issue 1, 2015, Pages 366-371

  Kuciauskas, Darius ^a   Kanevce, Ana ^a   Dippo, Pat ^a   Seyedmohammadi, Shahram ^b   Malik, Roger ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b FIRST SOLAR   (United States)

Author keywords

Cadmium compounds; charge carrier lifetime; photoluminescence (PL); photovoltaic cells

Indexed keywords

CADMIUM COMPOUNDS; CADMIUM TELLURIDE; PHOTOELECTROCHEMICAL CELLS; PHOTOLUMINESCENCE; PHOTOVOLTAIC CELLS; SINGLE CRYSTALS; TEMPERATURE DISTRIBUTION;

BULK RECOMBINATION; HIGH QUALITY; MINORITY CARRIER LIFETIMES; PHOTOVOLTAICS; ROOM TEMPERATURE; SURFACE RECOMBINATION VELOCITIES; TEMPERATURE DEPENDENCE; TWO-PHOTON EXCITATIONS;

CARRIER LIFETIME;

EID: 84919881787     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2014.2359738     Document Type: Article

References (27)

1. R. K. Ahrenkiel, N. Call, S. W. Johnston, and W. K. Metzger, "Comparison of techniques for measuring carrier lifetime in thin-film and multicrystalline photovoltaic materials," Sol. EnergyMater. Sol. Cells, vol. 94, pp. 2197-2204, Aug. 2010.
2. D. Kuciauskas, A. Kanevce, J. M. Burst, J. N. Duenow, R. Dhere, D. S. Albin, D. H. Levi, and R. K. Ahrenkiel, "Minority carrier lifetime analysis in the bulk of thin-film absorbers using subbandgap (twophoton) excitation," IEEE J. Photovoltaics, vol. 3, no. 4, pp. 1319-1324, Oct. 2013.
3. J. Ma, D. Kuciauskas, D. Albin, R. Bhattacharya, M. Reese, T. Barnes, J. V Li, T. Gessert, and S. Wei, "Dependence of the minority-carrier lifetime on the stoichiometry of CdTe using time-resolved photoluminescence and first-principles calculations," Phys. Rev. Lett., vol. 111, art. 067402 (5p.), 2013.
4. A. Noda, H. Kurita, and H. Hirano, "Bulk Growth of CdZnTe/CdTe Crystals," in Mercury Cadmium Telluride: Growth, Properties, and Applications, P. Capper and J. Garland, Eds. Hoboken, NJ, USA: Wiley, 2011.
5. A. V. Kvit, Y. V. Klevkov, S. A. Medvedev, V. S. Bagaev, A. V. Perestoronin, and A. F. Plotnikov, "Evolution of photoluminescence spectra of stoichiometric CdTe: Dependence on the purity of starting components," Semiconductors, vol. 34, no. 1, pp. 19-22, 2000.
6. D. P. Halliday, M. D. G. Potter, J. T. Mullins, and A. W. Brinkman, "Photoluminescence study of a bulk vapour grown CdTe crystal," J. Cryst. Growth, vol. 220, nos. 1/2, pp. 30-38, Nov. 2000.
7. C. Kraft, H. Metzner, M. Hädrich, U. Reislöhner, P. Schley, G. Gobsch, and R. Goldhahn, "Comprehensive photoluminescence study of chlorine activated polycrystalline cadmium telluride layers," J. Appl. Phys., vol. 108, no. 12, pp. 124503-1-124503-8, 2010.
8. D. S. Albin, D. Kuciauskas, J. Ma, W. K. Metzger, J. M. Burst, H. R. Moutinho, and P. C. Dippo, "Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride," Appl. Phys. Lett., vol. 104, no. 9, art. 092109 (4p.), Mar. 2014.
9. H. Shin and C. Sun, "The exciton and edge emissions in CdTe crystals," Mater. Sci. Eng. B, vol. 52, no. 1, pp. 78-83, Mar. 1998.
10. Z. C. Feng, A. Mascarenhas, andW. J. Choyke, "Low temperature photoluminescence spectra of (001) CdTe films grown by molecular beam epitaxy at different substrate temperatures," J. Lumin., vol. 35, pp. 329-341, 1986.
11. P. M. Amirtharaj and N. K. Dhar, "Near-band-edge photoluminescence from chemically treated CdTe surfaces," J. Appl. Phys., vol. 67, no. 6, p. 3107, 1990.
12. P. J. Dean, G. M. Williams, and G. Blackmore, "Novel type of optical transition observed inMBE grown CdTe," J. Phys. D Appl. Phys., vol. 17, pp. 2291-2300, 1984.
13. C. Onodera and T. Taguchi, "A new 1.47 eV defect-luminescence band in MOCVD-grown CdTe on (100) GaAs," J. Cryst. Growth, vol. 101, pp. 502-506, 1990.
14. R. Cohen, V. Lyahovitskaya, E. Poles, A. Liu, and Y. Rosenwaks, "Unusually low surface recombination and long bulk lifetime in n-CdTe single crystals," Appl. Phys. Lett., vol. 73, no. 10, pp. 1400-1402, 1998.
15. Y. Rosenwaks, Y. Shapira, and D. Huppert, "Picosecond time-resolved luminescence studies of surface and bulk recombination processes in InP," Phys. Rev. B, vol. 45, no. 16, pp. 9108-9119, 1992.
16. A. P. Kirk,M. J. DiNezza, S. Liu, X.-H. Zhao, and Y.-H. Zhang, "CdTe vs. GaAs solar cells-A modeling case study with preliminary experimental results," in Proc. IEEE 39th Photovoltaic Spec. Conf., 2013, pp. 2515-2517.
17. X.-H. Zhao, M. J. DiNezza, S. Liu, S. Lin, Y. Zhao, and Y.-H. Zhang, "Time-resolved and excitation-dependent photoluminescence study of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy," J. Vac. Sci. Technol. B Microelectron. Nanometer Struct., vol. 32, no. 4, pp. 040601-1-040601-4, Jul. 2014.
18. J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, B. Keyes, and A. E. Kibbler, "Ultralowrecombination velocity at Ga0.5 In0.5 P/GaAs heterointerfaces," Appl. Phys. Lett., vol. 55, no. 12, p. 1208-1210, 1989.
19. E. S. Barnard, E. T. Hoke, S. T. Connor, J. R. Groves, T. Kuykendall, Z. Yan, E. C. Samulon, E. D. Bourret-Courchesne, S. Aloni, P. J. Schuck, C. H. Peters, and B. E. Hardin, "Probing carrier lifetimes in photovoltaic materials using subsurface two-photon microscopy," Sci. Rep., vol. 3, pp. 1-9, Jun. 2013.
20. S. Johnston, K. Zaunbrecher, R. Ahrenkiel, D. Kuciauskas, D. Albin, andW.Metzger, "Simultaneous measurement of minority-carrier lifetime in single-crystal CdTe using three transient decay techniques," IEEE J. Photovoltaics, vol. 4, no. 3, pp. 1295-1300, Sep. 2014.
21. M. J. DiNezza, X.-H. Zhao, S. Liu, A. P. Kirk, and Y.-H. Zhang, "Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates usingmolecular beam epitaxy," Appl. Phys. Lett., vol. 103, no. 19, pp. 193901-1-193901-4, Nov. 2013.
22. W. K. Metzger, D. Albin, M. J. Romero, P. Dippo, and M. Young, "CdCl2 treatment, S diffusion, and recombination in polycrystalline CdTe," J. Appl. Phys., vol. 99, no. 10, pp. 103703-1-103703-6, 2006.
23. R. K. Ahrenkiel and J. Dashdorj, "Interface recombination velocity measurement by a contactless microwave technique," J. Vac. Sci. Technol. B Microelectron. Nanometer Struct., vol. 22, no. 4, pp. 2063-2067, 2004.
24. A. Kanevce, D. H. Levi, and D. Kuciauskas, "The role of drift, diffusion, and recombination in time-resolved photoluminescence of CdTe solar cells determined through numerical simulation," Prog. Photovoltaics Res. Appl., Feb. 2013. DOI: 10.1002/pip.2369
25. TCAD SDEVICE Manual, Release H-2013.03, Synopsys, Zurich, Switzerland, 2013.
26. M. O. Reese, J. M. Burst, C. L. Perkins, S. W. Johnston, D. Kuciauskas, T. M. Barnes, and W. K. Metzger, "Surface passivation of CdTe single crystals," IEEE J. Photovoltaics, to be published.
27. D. W. Niles, X. Li, P. Sheldon, and H. Hochst, "A photoemission determination of the band diagram of the Te/CdTe interface," J. Appl. Phys., vol. 77, no. 9, pp. 4489-4493, 1995.