Implementation of tunneling pasivated contacts into industrially relevant n-Cz Si solar cells

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Volumn , Issue , 2015, Pages

  Nemeth, William ^a   Lasalvia, Vincenzo ^a   Page, Matthew R ^a   Warren, Emily L ^a   Dameron, Arrelaine ^a   Norman, Andrew G ^a   Lee, Benjamin G ^a   Young, David L ^a   Stradins, Paul ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN BOUNDARIES; METALS; PRECIPITATION (CHEMICAL); SILICON; SILICON WAFERS; SOLAR CELLS;

BACK CONTACT; BULK LIFETIME; CAPPING LAYER; GRAIN-BOUNDARY DIFFUSION; HIGH-EFFICIENCY; PRECIPITATE DISSOLUTION; SI SOLAR CELLS; SI/SIO2;

SILICON SOLAR CELLS;

EID: 84961613296     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2015.7356062     Document Type: Conference Paper

References (8)

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2. P. Zhang, H. Vainola, A. A. Istratov, and E. R. Weber, "The thermal stability of iron precipitates in silicon after internal gettering, " Physica B: Condensed Matter, 2003.
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6. P. Stradins, S. Essig, W. Nemeth, et al., "Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells, " WCPEC-6, 2014.
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