Ion implanted screen printed N-type solar cell with tunnel oxide passivated back contact

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Volumn , Issue , 2015, Pages

  Upadhyaya, Ajay D ^a   Ok, Young Woo ^a   Chang, Elizabeth ^a   Upadhyaya, Vijaykumar ^a   Madani, Keeya ^a   Tate, Keith ^a   Cho, Eunhwan ^a   Rounsaville, Brain ^a   Chandrasekaran, V ^b   Yelundur, V ^b   Gupta, Atul ^b   Rohatgi, Ajeet ^a,b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Suniva Inc   (United States)

Author keywords

crystalline; N type; passivated contact; poly silicon; tunnel oxide

Indexed keywords

CRYSTALLINE MATERIALS; EFFICIENCY; OPTIMIZATION; PASSIVATION; POLYSILICON; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS;

CELL STRUCTURE; HIGHER EFFICIENCY; ION IMPLANTED; METAL CONTACTS; SCREEN-PRINTED; SELECTIVE EMITTERS; SYMMETRIC STRUCTURES; TUNNEL OXIDES;

ION IMPLANTATION;

EID: 84961572512     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2015.7356147     Document Type: Conference Paper

References (5)

1. Zhao J, Wang A, Green MA, Ferrazza F. "Novel 19. 8% efficient honeycomb textured multicrystalline and 24. 4% monocrystalline silicon solar cells". Applied Physics Letters 1998; 73: 1991-1993.
2. Frank Feldmann, Maik Simon, Martin Bivour, Christian Reichel, Martin Hermle, Stefan W. Glunz, "Efficient carrierselective p-and n-contacts for Si solar cells", Solar Energy Materials and Solar Cells, Volume 131, December 2014, Pg 100-104.
3. R. B Godfrey and M. A Green, "655 mV open-circuit voltage, 17. 6% efficient silicon MIS solar cells, " in Appl. Phys. Lett. 34, 790 (1979).
4. E. Yablonovitch, T. Gmitter, R. M. Swanson, Y. H. Kwark "A 720 mV open circuit voltage SiOx: c-Si: SiOx double heterostructure solar cell" Applied Physics Letters, 47 (1985), pp. 1211-121.
5. J. Shewchun, R. Singh, M. A. Green, "Theory of metal-insulator-semiconductor solar cells"Journal of Applied Physics, 48 (1977), p. 76.