Effects of annealing on ion-implanted Si for interdigitated back contact solar cell

Current Applied Physics

Volumn 12, Issue 6, 2012, Pages 1615-1618

  Kang, Min Gu ^a,b   Lee, Jong Han ^a   Boo, Hyunpil ^a   Tark, Sung Ju ^a   Hwang, Hae Chul ^c   Hwang, Wook Jung ^c   Kang, Hee Oh ^c   Kim, Donghwan ^a  

^a Korea University   (South Korea)

^b Korea Institute of Energy Research (KIER)   (South Korea)

^c National Nano Fab Center (NNFC)   (South Korea)

Author keywords

Annealing; Implantation; Interdigitated back contact; Si solar cell

Indexed keywords

ANNEALING TEMPERATURES; B-IMPLANTED SI; BACK SURFACE FIELDS; DIODE PROPERTIES; INTERDIGITATED BACK CONTACTS; QUASI-STEADY-STATE PHOTOCONDUCTANCE; SI SOLAR CELLS; SURFACE-TEXTURING; TWO-STEP ANNEALING;

ION IMPLANTATION; SILICON; SILICON SOLAR CELLS;

ANNEALING;

EID: 84863983786     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2012.05.035     Document Type: Article

References (18)

1. P. Wawer, J. Müller, M. Fischer, P. Engelhart, A. Mohr, and K. Petter Latest trends in development and manufacturing of industrial, crystalline silicon solar-cells Energy Procedia 8 2011 2 8
2. M.A. Green, K. Emery, Y. Hishikawa, W. Warta, and E.D. Dunlop Solar cell efficiency tables (Version 38) Prog. Photovoltaics 19 2011 565 572
3. E. Van Kerschaver, and G. Beaucarne Back-contact solar cells: a review Prog. Photovoltaics 14 2006 107 123
4. M.A. Kessler, T. Ohrdes, B. Wolpensinger, R. Bock, N.P. Harder, Characterisation and implications of the boron rich layer resulting from open-tube liquid source BBr3 boron diffusion processes, in: Proc. 34th IEEE Photovoltaic Specialist Conf., 2009, pp. 001556-001561.
5. 3 diffusion processes Semicond. Sci. Tech. 25 2010 055001
6. P.J. Cousins, and J.E. Cotter The influence of diffusion-induced dislocations on high efficiency silicon solar cells IEEE T. Electron Dev. 53 2006 457 464
7. S. Prussin Generation and distribution of dislocations by solute diffusion J. Appl. Phys. 32 1961 1876 1881
8. + silicon films J. Electrochem. Soc. 143 1996 3389 3393
9. J.A. Minnucci, A.R. Kirkpatrick, and K.W. Matthei Tailored emitter, low-resistivity, ion-implanted silicon solar cells IEEE T. Electron Dev. 27 1980 802 806
10. P. Ostoja, S. Solmi, and A. Zani Optical and electrical characterization of high-dose ion implanted, laser-annealed silicon solar cells J. Appl. Phys. 52 1981 6208 6213
11. N. Bordin, L. Kreinin, J. Broder, N. Eisenberg, G. Grigorieva, K. Zvyagina, M. Kagan, Recombination parameters of Si solar cells with back surface field formed by ion implantation, in: Proc. 4Th World Conf. Photovoltaic Solar Energy Conv., 2006, pp. 1171-1174.
12. K. Sopian, N. Asim, N. Amin, and S.H. Zaidi Plasma implantation for emitter and localized back surface field formation in silicon solar cells Eur. J. Sci. Res. 24 2008 365 372
13. E.C. Douglas, and R.V. D'Aiello A study of the factors which control the efficiency of ion-implanted silicon solar cells IEEE T. Electron Dev. 27 1980 792 802
14. M.B. Spitzer, S.P. Tobin, and C.J. Keavney High-efficiency ion-implanted silicon solar cells IEEE T. Electron Dev. 31 1984 546 550
15. P. Pichler Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon 2004 Springer
16. D. Macdonald, and L.J. Geerligs Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon Appl. Phys. Lett. 85 2004 4061 4063
17. G. Coletti, P.C.P. Bronsveld, G. Hahn, W. Warta, D. Macdonald, B. Ceccaroli, K. Wambach, N. Le Quang, and J.M. Fernandez Impact of metal contamination in silicon solar cells Adv. Funct. Mater. 21 2011 879 890
18. M.N.G. Blamires, M.D. Matthews, and R.S. Nelson Improved profiles of electrical activity in boron implanted silicon Phys. Lett. A 28 1968 178 179