InGaN/GaN nanowires grown on SiO2 and light emitting diodes with low turn on voltages

Optics Express

Volumn 23, Issue 11, 2015, Pages A650-A656

  Park, Youngseo ^a   Jahangir, Shafat ^b   Park, Yongjun ^c   Bhattacharya, Pallab ^b   Heo, Junseok ^a  

^a Ajou University   (South Korea)

^b UNIVERSITY OF MICHIGAN   (United States)

^c Hong Ik University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT; MOLECULAR BEAM EPITAXY; NANOWIRES; SCANNING ELECTRON MICROSCOPY;

EPITAXIAL LIFTOFF; FLEXIBLE POLYIMIDE; INTERMEDIATE LAYERS; LOW TURN-ON VOLTAGES; NANOWIRE LIGHT EMITTING DIODES; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; STRUCTURAL STUDIES; TURN-ON VOLTAGES;

LIGHT EMITTING DIODES;

EID: 84943141022     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.23.00A650     Document Type: Article

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