Improvement in separation rate of epitaxial lift-off by hydrophilic solvent for GaAs solar cell applications

Solar Energy Materials and Solar Cells

Volumn 122, Issue , 2014, Pages 233-240

  Wu, Fan Lei ^a   Ou, Sin Liang ^a   Horng, Ray Hua ^a   Kao, Yu Cheng ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Contact angle; Cu; Epitaxial lift off; GaAs solar cells; Hydrophilic solution

Indexed keywords

EPILAYER STRUCTURES; EPITAXIAL LIFTOFF; GAAS SOLAR CELLS; GAAS SUBSTRATES; HYDROPHILIC SOLVENTS; LATERAL ETCHING; PHOTOVOLTAIC APPLICATIONS; SACRIFICIAL LAYER;

ACETONE; CONTACT ANGLE; COPPER; EPILAYERS; EPITAXIAL GROWTH; ETCHING; HYDROFLUORIC ACID; HYDROPHILICITY; SEMICONDUCTING GALLIUM; SOLAR CELLS; SURFACE TENSION;

GALLIUM ARSENIDE;

EID: 84891752672     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.12.013     Document Type: Article

References (27)

1. E. Yablonovitch, T. Gmitter, J.P. Harbison, and R. Bhat Extreme selectivity in the lift-off of epitaxial GaAs films Appl. Phys. Lett. 51 1987 2222 2224
2. M.M.A.J. Voncken, J.J. Schermer, G. Maduro, G.J. Bauhuis, P. Mulder, and P.K. Larsen Influence of radius of curvature on the lateral etch rate of the weight induced epitaxial lift-off process Mater. Sci. Eng., B 95 2002 242 248
3. J.J. Schermer, P. Mulder, G.J. Bauhuis, P.K. Larsen, G. Oomen, and E. Bongers Thin-film GaAs epitaxial lift-off solar cells for space applications Prog. Photovoltaics 13 2005 587 596
4. Y. Yazawa, K. Tamura, S. Watahiki, T. Kitatani, J. Minemura, and T. Warabisako GaInP single junction and GaInP/GaAs two junction thin-film solar cell structures by epitaxial lift-off Sol. Energy Mater. Sol. Cells 50 1998 229 235
5. Y. Yazawa, J. Minemura, K. Tamura, S. Watahiki, T. Kitatani, and T. Warabisako Process damage free thin-film GaAs solar cells by epitaxial liftoff with GaInP window layer Sol. Energy Mater. Sol. Cells 50 1998 163 168
6. J.F. Geisz, S. Kurtz, M.W. Wanlass, J.S. Ward, A. Duda, D.J. Friedman, J.M. Olson, W.E. McMahon, T.E. Moriarty, and J.T. Kiehl High-efficiency GaInP/GaAs/InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction Appl. Phys. Lett. 91 2007 023502
7. T. Takamoto, T. Kodama, H. Yamaguchi, T. Agui, N. Takahachi, H. Washio, T. Hisamatsu, M. Kaneiwa, K. Okamoto, Paper-thin InGaP/GaAs solar cells, in: Proceedings of the IEEE Fourth World Conference on Photovoltaic Energy Conversion, Waikoloa 2, 2006, pp. 1769-1772.
8. T. Takamoto, M. Kaneiwa, M. Imaizumi, and M. Yamaguchi InGaP/GaAs-based multijunction solar cells Prog. Photovoltaics 13 2005 495 511
9. M.C. Tseng, R.H. Horng, Y.L. Tsai, D.S. Wuu, and H.H. Yu Fabrication and characterization of GaAs solar cells on copper substrates IEEE Electron Device Lett. 30 2009 940 942
10. G.J. Bauhuis, P. Mulder, E.J. Haverkamp, J.J. Schermer, E. Bongers, G. Oomen, W. Kostler, and G. Strobl Wafer reuse for repeated growth of III-V solar cells Prog. Photovoltaics 18 2010 155 159
11. J. Yoon, S. Jo, I.S. Chun, I. Jung, H.S. Kim, M. Meitl, E. Menard, X.L. Li, J.J. Coleman, U. Paik, and J.A. Rogers GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies Nature 465 2010 329 333
12. M.M.A.J. Voncken, J.J. Schermer, A.T.J. Van Niftrik, G.J. Bauhuis, P. Mulder, P.K. Larsen, T.P.J. Peters, B. de Bruin, A. Klaassen, and J.J. Kelly Etching AlAs with HF for epitaxial lift-off applications J. Electrochem. Soc. 151 2004 G347 G352
13. J. Maeda, Y. Sasaki, N. Dietz, K. Shibahara, S. Yokoyama, S. Miyazaki, and M. Hirose High-rate GaAs epitaxial lift-off technique for optoelectronic integrated circuits Jpn. J. Appl. Phys. 36 1997 1554 1557
14. T. Baum, and D.J. Schiffrin AFM study of surface finish improvement by ultrasound in the anisotropic etching of Si 〈1 0 0⌠in KOH for micromachining applications J. Micromech. Microeng. 7 1997 338 342
15. S. Fordham On the calculation of surface tension from measurements of pendant drops Proc. R. Soc., Ser. A 194 1948 1 16
16. J.A. Dean Lange's Handbook of Chemistry 15th ed. 1999 McGraw-Hill United States of America 462 476
17. N.J. Smeenk, J. Engel, P. Mulder, G.J. Bauhuis, G.M.M.W. Bissels, J.J. Schermer, E. Vlieg, and J.J. Kelly Arsenic formation on GaAs during etching in HF solutions: relevance for the epitaxial lift-off process ECS J. Solid State Sci. Technol 2 2013 P58 P65
18. W. Storm, D. Wolany, F. Schroder, G. Becker, B. Burkhardt, L. Wiedmann, and A. Benninghoven Analysis of stoichiometry and oxide growth of HF treated GaAs (1 0 0) by x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry J. Vac. Sci. Technol., B 12 1994 147 153
19. P.H.L. Notten The etching of InP in HCI solutions: a chemical mechanism ECS J. Solid State Sci. Technol 131 1984 2641 2644
20. J.J. Schermer, G.J. Bauhuis, P. Mulder, W.J. Meulemeesters, E. Haverkamp, M.M.A.J. Voncken, and P.K. Larsen High rate epitaxial lift-off of InGaP films from GaAs substrates Appl. Phys. Lett. 76 2000 2131 2133
21. M.C. Tseng, R.H. Horng, F.L. Wu, C.H. Wu, and M.D. Yang Performance of GaAs/mirror/Cu-substrate thin-film solar cells IEEE Trans. Electron Devices 58 2011 3898 3904
22. C. Algora, and V. Diaz Manufacturing tolerances of terrestrial concentrator p-on-n GaAs solar cells Prog. Photovoltaics 9 2001 27 39
23. D.S.H. Chan, and J.C.H. Phang Analytical methods for the extraction of solar-cell single- and double-diode model parameters from IV characteristics IEEE Trans. Electron Devices 34 1987 286 293
24. 0.83As solar cell using X-ray reciprocal space mapping IEEE J. Quantum Electron. 47 2011 1434 1442
25. C.Y. Tseng, and C.T. Lee Improved performance mechanism of III-V compound triple junction solar cell using hybrid electrode structure Sol. Energy 89 2013 17 22
26. L. Zhao, High Efficiency Mechanically Stacked Multi-junction Solar Cells for Concentrator Photovoltaics, University of Ku Leuven, 2011.
27. T. Sasaki, K. Arafune, H.S. Lee, N.J. Ekins-Daukes, S. Tanaka, Y. Ohshita, and M. Yamaguchi Effects of thermal cycle annealing on reduction of defect density in lattice-mismatched InGaAs solar cells Physica B 376-377 2006 626 629