Single-mode GaN nanowire lasers

Optics Express

Volumn 20, Issue 16, 2012, Pages 17873-17879

  Li, Qiming ^a   Wrigh, Jeremy B ^a,b   Chow, Weng W ^a   Luk, Ting Shan ^a   Brener, Igal ^a   Lester, Luke F ^b   Wang, George T ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC MEDIA; GALLIUM NITRIDE; WET ETCHING;

DRY-ETCH; GAIN BANDWIDTH; GAIN MEDIUM; GAN NANOWIRES; LASING THRESHOLD; MATERIAL GAIN; MODE COMPETITION; PRECISE CONTROL; SIDE MODE SUPPRESSION RATIOS; SINGLE MODE; SINGLE MODE LASING; SINGLE-FREQUENCY; TOPDOWN; WET-ETCH;

NANOWIRES;

EID: 84864598108     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.017873     Document Type: Article

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