Ultra-low voltage time-resolved emission measurements from 32 nm SOI CMOS integrated circuits

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn 2014-January, Issue January, 2014, Pages 406-412

  Shehata, Andrea Bahgat ^a   Stellari, Franco ^a   Weger, Alan ^a   Song, Peilin ^a   Anant, Vikas ^b   Sunter, Kristen ^c   Berggren, Karl K ^c   Lundquist, Ted ^d   Ramsay, Euan ^d  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Photon Spot Inc   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d DCG SYSTEMS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE PHOTODIODES; FAILURE ANALYSIS; NANOWIRES; PARTICLE BEAMS; PHOTODETECTORS; PHOTONS; THRESHOLD VOLTAGE;

FIGURES OF MERITS; FRONT END ELECTRONICS; SINGLE-PHOTON DETECTORS; SUPERCONDUCTING NANOWIRE SINGLE PHOTON DETECTORS; SUPPLY VOLTAGES; TIME-RESOLVED EMISSIONS; ULTRA-LOW-VOLTAGE; WORLD RECORDS;

CMOS INTEGRATED CIRCUITS;

EID: 84932151222     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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