Low electron mobility of field-effect transistor determined by modulated magnetoresistance

Journal of Applied Physics

Volumn 102, Issue 10, 2007, Pages

  Tauk, R ^a   Lusakowski J ^a,c   Knap, W ^a,c   Tiberj, A ^a   Bougrioua, Z ^b   Azize, M ^b   Lorenzini, P ^b   Sakowicz, M ^c   Karpierz, K ^c   Fenouillet Beranger, C ^d   Cass M ^d   Gallon, C ^e   Boeuf, F ^e   Skotnicki, T ^e  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CRHEA CNRS   (France)

^c UNIVERSITY OF WARSAW   (Poland)

^d CEA LETI   (France)

^e STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON MOBILITY; MAGNETIC FIELDS; MAGNETORESISTANCE; VOLTAGE MEASUREMENT;

GATE VOLTAGE; NANOMETER GATES; TRANSISTOR CHANNELS;

GATES (TRANSISTOR);

EID: 36749102063     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2815610     Document Type: Article

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