Room temperature imaging at 1.63 and 2.54 THz with field effect transistor detectors

Journal of Applied Physics

Volumn 108, Issue 5, 2010, Pages

  Nadar, S ^a   Videlier, H ^a   Coquillat, D ^a   Teppe, F ^a   Sakowicz, M ^a   Dyakonova, N ^a   Knap, W ^a   Seliuta, D ^b   Kasalynas I ^b   Valusis G ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECTS; GAAS; NANOMETRICS; PHOTOVOLTAIC MODES; RADIATION FREQUENCIES; ROOM TEMPERATURE; SOURCE-DRAIN CURRENT; SPATIAL RESOLUTION; TRANSMISSION MODE; VOLTAGE SENSITIVITY;

DRAIN CURRENT; FREQUENCY RESPONSE; TERAHERTZ WAVES;

FIELD EFFECT TRANSISTORS;

EID: 77956796786     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3463414     Document Type: Article

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