-
1
-
-
84902344446
-
Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization
-
Lu, W., et al. Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization. Nano Research 7, 853 (2014).
-
(2014)
Nano Research
, vol.7
, pp. 853
-
-
Lu, W.1
-
2
-
-
84901193930
-
Black phosphorus field-effect transistors
-
Li, L., et al. Black phosphorus field-effect transistors. Nat. Nanotechnol 9, 372 (2014).
-
(2014)
Nat. Nanotechnol
, vol.9
, pp. 372
-
-
Li, L.1
-
3
-
-
84898075261
-
Phosphorene excites materials scientists
-
Reich, E. S. Phosphorene excites materials scientists. Nature 506, 7486 (2014).
-
(2014)
Nature
, vol.506
, pp. 7486
-
-
Reich, E.S.1
-
4
-
-
84902764385
-
Scaling laws for the bandgap and optical response of phosphorene nanoribbons
-
Tran, V. & Yang, L. Scaling laws for the bandgap and optical response of phosphorene nanoribbons. Phys. Rev. B 89, 245407 (2014).
-
(2014)
Phys. Rev. B
, vol.89
, pp. 245407
-
-
Tran, V.1
Yang, L.2
-
5
-
-
84907299993
-
Negative poissons ratio in single-layer black phosphorus
-
Jiang, J.-W. & Park, H. S. Negative poissons ratio in single-layer black phosphorus. Nat. Commun. 5, 4727 (2014).
-
(2014)
Nat. Commun.
, vol.5
, pp. 4727
-
-
Jiang, J.-W.1
Park, H.S.2
-
6
-
-
84904616293
-
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
-
Qiao, J., Kong, X., Hu, Z.-X., Yang, F. & Ji, W. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 5, 4475 (2014).
-
(2014)
Nat. Commun.
, vol.5
, pp. 4475
-
-
Qiao, J.1
Kong, X.2
Hu, Z.-X.3
Yang, F.4
Ji, W.5
-
7
-
-
84900478786
-
Strain-engineering the anisotropic electrical conductance of few-layer black phosphorus
-
Fei, R. & Yang, L. Strain-engineering the anisotropic electrical conductance of few-layer black phosphorus. Nano Lett. 14, 2884 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 2884
-
-
Fei, R.1
Yang, L.2
-
8
-
-
84907307347
-
Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating
-
Buscema, M., Groenendijk, D. J., Steele, G. A., van der Zant, H. S. J. & Castellanos-Gomez, A. Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating. Nat. Commun. 5, 4651 (2014).
-
(2014)
Nat. Commun.
, vol.5
, pp. 4651
-
-
Buscema, M.1
Groenendijk, D.J.2
Steele, G.A.3
Van Der Zant, H.S.J.4
Castellanos-Gomez, A.5
-
9
-
-
79251526172
-
Ab initio studies on atomic and electronic structures of black phosphorus
-
Du, Y., Ouyang, C., Shi, S. & Lei, M. Ab initio studies on atomic and electronic structures of black phosphorus. J. Appl. Phys. 107, 093718 (2010).
-
(2010)
J. Appl. Phys.
, vol.107
, pp. 093718
-
-
Du, Y.1
Ouyang, C.2
Shi, S.3
Lei, M.4
-
10
-
-
84910147904
-
Electronic bandgap and edge reconstruction in phosphorene materials
-
Liang, L., et al. Electronic bandgap and edge reconstruction in phosphorene materials. Nano Lett. 14, 6400 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 6400
-
-
Liang, L.1
-
11
-
-
84941640088
-
Phosphorene: An unexplored 2D semiconductor with a high hole mobility
-
Liu, H., et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano. 89, 245407 (2014).
-
(2014)
ACS Nano
, vol.89
, pp. 245407
-
-
Liu, H.1
-
12
-
-
84904707277
-
Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
-
Xia, F., Wang, H. & Jia, Y. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014).
-
(2014)
Nat. Commun.
, vol.5
, pp. 4458
-
-
Xia, F.1
Wang, H.2
Jia, Y.3
-
13
-
-
84922698272
-
Switching a normal insulator into a topological insulator via electric field with application to phosphorene
-
Liu, Q., Zhang, X., Abdalla, L. B., Fazzio, A. & Zunger. A. Switching a normal insulator into a topological insulator via electric field with application to phosphorene. Nano Lett. 15, 1222 (2015).
-
(2015)
Nano Lett.
, vol.15
, pp. 1222
-
-
Liu, Q.1
Zhang, X.2
Abdalla, L.B.3
Fazzio, A.4
Zunger, A.5
-
14
-
-
59949098337
-
The electronic properties of graphene
-
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S. & Geim, A. K. The electronic properties of graphene. Rev. Mod. Phys. 81, 109 (2009).
-
(2009)
Rev. Mod. Phys.
, vol.81
, pp. 109
-
-
Castro Neto, A.H.1
Guinea, F.2
Peres, N.M.R.3
Novoselov, K.S.4
Geim, A.K.5
-
15
-
-
84857702775
-
Electrically tunable bandgap in silicone
-
Drummond, N. D., Zlyomi, V. & Falko, V. I. Electrically tunable bandgap in silicene. Phys. Rev. B 85, 075423 (2012).
-
(2012)
Phys. Rev. B
, vol.85
, pp. 075423
-
-
Drummond, N.D.1
Zlyomi, V.2
Falko, V.I.3
-
16
-
-
84930482259
-
Highly anisotropic and robust excitons in monolayer black phosphorus
-
Wang, X., et al. Highly anisotropic and robust excitons in monolayer black phosphorus. Nat. Nanotechnol 10, 517 (2015).
-
(2015)
Nat. Nanotechnol
, vol.10
, pp. 517
-
-
Wang, X.1
-
17
-
-
84911403555
-
Tuning of the electronic and optical properties of single-layer black phosphorus by strain
-
Cakir, D., Sahin, H. & Peeters, F. H. Tuning of the electronic and optical properties of single-layer black phosphorus by strain. Phys. Rev. B 90, 205421 (2014).
-
(2014)
Phys. Rev. B
, vol.90
, pp. 205421
-
-
Cakir, D.1
Sahin, H.2
Peeters, F.H.3
-
18
-
-
84899721921
-
Strain-induced gap modification in black phosphorus
-
Rodin, A. S., Carvalho, A. & Neto, A. H. C. Strain-induced gap modification in black phosphorus. Phys. Rev. Lett. 112, 176801 (2014).
-
(2014)
Phys. Rev. Lett.
, vol.112
, pp. 176801
-
-
Rodin, A.S.1
Carvalho, A.2
Neto, A.H.C.3
-
20
-
-
84874509316
-
Strain-induced topological insulator phase transition in HgSe
-
Winterfeld, L., et al. Strain-induced topological insulator phase transition in HgSe. Phys. Rev. B 87, 075143 (2013).
-
(2013)
Phys. Rev. B
, vol.87
, pp. 075143
-
-
Winterfeld, L.1
-
21
-
-
84901790021
-
The d-p band-inversion topological insulator in bismuth-based skutterudites
-
Yang, M. & Liu, W.-M. The d-p band-inversion topological insulator in bismuth-based skutterudites. Scientific Reports 4, 5131 (2014).
-
(2014)
Scientific Reports
, vol.4
, pp. 5131
-
-
Yang, M.1
Liu, W.-M.2
-
22
-
-
73949114580
-
The quantum spin Hall effect and topological insulators
-
Qi, X.-L. & Zhang, S.-C. The quantum spin Hall effect and topological insulators. Rhys. Today 63, 33 (2010).
-
(2010)
Rhys. Today
, vol.63
, pp. 33
-
-
Qi, X.-L.1
Zhang, S.-C.2
-
23
-
-
84863190383
-
Topological phase transition in layered GaS and GaSe
-
Zhu, Z., Cheng, Y. & Schwingenschlögl, U. Topological phase transition in layered GaS and GaSe. Phys. Rev. Lett. 108, 266805 (2012).
-
(2012)
Phys. Rev. Lett.
, vol.108
, pp. 266805
-
-
Zhu, Z.1
Cheng, Y.2
Schwingenschlögl, U.3
-
24
-
-
84912568174
-
Layer-dependent band alignment and work function of few-layer phosphorene
-
Cai, Y., Zhang, G. & Zhang, Y.-W. Layer-dependent band alignment and work function of few-layer phosphorene. Scientific Reports 4, 6677 (2014).
-
(2014)
Scientific Reports
, vol.4
, pp. 6677
-
-
Cai, Y.1
Zhang, G.2
Zhang, Y.-W.3
-
25
-
-
84961291571
-
Semiconductor to metal transition in bilayer phosphorene under normal compressive strain
-
Manjanath, A., Samanta, A., Pandey, T. & Singh, A. K. Semiconductor to metal transition in bilayer phosphorene under normal compressive strain. Nanotechnology 26, 075701 (2015).
-
(2015)
Nanotechnology
, vol.26
, pp. 075701
-
-
Manjanath, A.1
Samanta, A.2
Pandey, T.3
Singh, A.K.4
-
26
-
-
84898072730
-
Bilayer phosphorene: Effect of stacking order on bandgap and its potential applications in thin-film solar cells
-
Dai, J. & Zeng, X. Bilayer phosphorene: effect of stacking order on bandgap and its potential applications in thin-film solar cells. J. Phys. Chem. Lett. 5, 1289 (2014).
-
(2014)
J. Phys. Chem. Lett.
, vol.5
, pp. 1289
-
-
Dai, J.1
Zeng, X.2
-
27
-
-
28844477210
-
2 topological order and the quantum spin Hall effect
-
Kane, C. L. & Mele, E. J. Z2 topological order and the quantum spin Hall effect. Phys. Rev. Lett. 95, 146802 (2005).
-
(2005)
Phys. Rev. Lett.
, vol.95
, pp. 146802
-
-
Kane, C.L.1
Mele, E.J.Z.2
-
28
-
-
84878031363
-
High-dimensional topological insulators with quaternionic analytic Landau levels
-
Li, Y. & Wu, C. High-dimensional topological insulators with quaternionic analytic Landau levels. Phys. Rev. Lett. 110, 216802 (2013).
-
(2013)
Phys. Rev. Lett.
, vol.110
, pp. 216802
-
-
Li, Y.1
Wu, C.2
-
29
-
-
78349239882
-
Colloquium: Topological insulators
-
Hasan, M. Z. & Kane, C. L. Colloquium: topological insulators. Rev. Mod. Phys. 82, 3045 (2010).
-
(2010)
Rev. Mod. Phys.
, vol.82
, pp. 3045
-
-
Hasan, M.Z.1
Kane, C.L.2
-
30
-
-
80054934761
-
Topological insulators and superconductors
-
Qi, X.-L., Zhang, S.-C. & Kane, C. L. Topological insulators and superconductors. Rev. Mod. Phys. 83, 1057 (2011).
-
(2011)
Rev. Mod. Phys.
, vol.83
, pp. 1057
-
-
Qi, X.-L.1
Zhang, S.-C.2
Kane, C.L.3
-
31
-
-
77956939304
-
High-speed graphene-transistors with a self-aligned nanowire gate
-
Liao, L., et al. High-speed graphene-transistors with a self-aligned nanowire gate. Nature 467, 305 (2010).
-
(2010)
Nature
, vol.467
, pp. 305
-
-
Liao, L.1
-
32
-
-
79953758358
-
High-frequency, scaled graphene transistors on diamond-like carbon
-
Wu, Y., et al. High-frequency, scaled graphene transistors on diamond-like carbon. Nature 472, 74 (2011).
-
(2011)
Nature
, vol.472
, pp. 74
-
-
Wu, Y.1
-
33
-
-
83655193084
-
Two-dimensional topological insulator state and topological phase transition in bilayer graphene
-
Qiao, Z., Tse, W.-K., Jiang, H., Yao, Y. & Niu, Q. Two-dimensional topological insulator state and topological phase transition in bilayer graphene. Phys. Rev. Lett. 107, 256801 (2011).
-
(2011)
Phys. Rev. Lett.
, vol.107
, pp. 256801
-
-
Qiao, Z.1
Tse, W.-K.2
Jiang, H.3
Yao, Y.4
Niu, Q.5
-
34
-
-
33845290260
-
Quantum spin Hall effect and enhanced magnetic response by spin-orbit coupling
-
Murakami, S. Quantum spin Hall effect and enhanced magnetic response by spin-orbit coupling. Phys. Rev. Lett. 97, 236805 (2006).
-
(2006)
Phys. Rev. Lett.
, vol.97
, pp. 236805
-
-
Murakami, S.1
-
35
-
-
80053941212
-
Inter-facing 2D and 3D topological insulators: Bi(111) bilayer on Bi2Te3
-
Hirahara, T., et al. Inter-facing 2D and 3D topological insulators: Bi(111) bilayer on Bi2Te3. Phys. Rev. Lett. 107, 166801 (2011).
-
(2011)
Phys. Rev. Lett.
, vol.107
, pp. 166801
-
-
Hirahara, T.1
-
36
-
-
80051498457
-
Quantum spin Hall effect in silicene and two-dimensional germanium
-
Liu, C.-C., Feng, W. & Yao, Y. Quantum spin Hall effect in silicene and two-dimensional germanium. Phys. Rev. Lett. 107, 076802 (2011).
-
(2011)
Phys. Rev. Lett.
, vol.107
, pp. 076802
-
-
Liu, C.-C.1
Feng, W.2
Yao, Y.3
-
37
-
-
84884692935
-
Large-gap quantum spin Hall insulators in tin films
-
Xu, Y., et al. Large-gap quantum spin Hall insulators in tin films. Phys. Rev. Lett. 111, 136804 (2013).
-
(2013)
Phys. Rev. Lett.
, vol.111
, pp. 136804
-
-
Xu, Y.1
-
38
-
-
4243943295
-
Generalized gradient approximation made simple
-
Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865 (1996).
-
(1996)
Phys. Rev. Lett.
, vol.77
, pp. 3865
-
-
Perdew, J.P.1
Burke, K.2
Ernzerhof, M.3
-
39
-
-
0037799714
-
Hybrid functionals based on a screened Coulomb potential
-
Heyd, J., Scuseria, G. E. & Ernzerhof M. Hybrid functionals based on a screened Coulomb potential. J. Chem. Phys. 118, 8207 (2003).
-
(2003)
J. Chem. Phys.
, vol.118
, pp. 8207
-
-
Heyd, J.1
Scuseria, G.E.2
Ernzerhof, M.3
-
40
-
-
80052487008
-
Comparative study of hybrid functionals applied to structural and electronic properties of semiconductors and insulators
-
Matsushita, Y.-I., Nakamura, K. & Oshiyama, A. Comparative study of hybrid functionals applied to structural and electronic properties of semiconductors and insulators. Phys. Rev. B 84, 075205 (2011).
-
(2011)
Phys. Rev. B
, vol.84
, pp. 075205
-
-
Matsushita, Y.-I.1
Nakamura, K.2
Oshiyama, A.3
-
41
-
-
51049097038
-
Raman mapping investigation of graphene on transparent flexible substrate: The strain effect
-
Yu, T., et al. Raman mapping investigation of graphene on transparent flexible substrate: the strain effect. J. Phys. Chem. Lett. 112, 12602 (2008).
-
(2008)
J. Phys. Chem. Lett.
, vol.112
, pp. 12602
-
-
Yu, T.1
-
42
-
-
34347373900
-
Topological insulators with inversion symmetry
-
Fu, L. & Kane, C. L. Topological insulators with inversion symmetry. Phys. Rev. B 76, 045302 (2007).
-
(2007)
Phys. Rev. B
, vol.76
, pp. 045302
-
-
Fu, L.1
Kane, C.L.2
-
43
-
-
33750559983
-
Semiempirical GGA-type density functional constructed with a long-range dispersion correction
-
Grimme, S. Semiempirical GGA-type density functional constructed with a long-range dispersion correction. J. Comput. Chem. 27, 1787 (2006).
-
(2006)
J. Comput. Chem.
, vol.27
, pp. 1787
-
-
Grimme, S.1
-
44
-
-
10344244030
-
Observation of the spin Hall effect in semiconductors
-
Kato, Y. K., Myers, R. C., Gossard, A. C. & Awschalom, D. D. Observation of the spin Hall effect in semiconductors. Science 306, 1910 (2004).
-
(2004)
Science
, vol.306
, pp. 1910
-
-
Kato, Y.K.1
Myers, R.C.2
Gossard, A.C.3
Awschalom, D.D.4
-
45
-
-
33748943669
-
Current-induced polarization and the spin hall effect at room temperature
-
Stern, N. P., et al. Current-induced polarization and the spin hall effect at room temperature. Phys. Rev. Lett. 97, 126603 (2006).
-
(2006)
Phys. Rev. Lett.
, vol.97
, pp. 126603
-
-
Stern, N.P.1
-
46
-
-
77954698267
-
Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy
-
Matsuzaka. S., Ohno. Y. & Ohno, H. Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy. Phys. Rev. B 80, 241305(R) (2009).
-
(2009)
Phys. Rev. B
, vol.80
, pp. 241305
-
-
Matsuzaka, S.1
Ohno, Y.2
Ohno, H.3
-
47
-
-
0042972936
-
Dissipationless quantum spin current at room temperature
-
Murakami, S., Nagaosa. N. & Zhang, S.-C. Dissipationless quantum spin current at room temperature. Science 301, 1348 (2003).
-
(2003)
Science
, vol.301
, pp. 1348
-
-
Murakami, S.1
Nagaosa, N.2
Zhang, S.-C.3
-
48
-
-
2342575465
-
Universal intrinsic spin Hall effect
-
Sinova, J., et al. Universal intrinsic spin Hall effect. Phys. Rev. Lett. 92, 126603 (2004).
-
(2004)
Phys. Rev. Lett.
, vol.92
, pp. 126603
-
-
Sinova, J.1
-
49
-
-
4243471288
-
Spin Hall effect
-
Hirsch. J. E. Spin Hall effect. Phys. Rev. Lett. 83, 1834 (1999).
-
(1999)
Phys. Rev. Lett.
, vol.83
, pp. 1834
-
-
Hirsch, J.E.1
-
50
-
-
33845708953
-
Quantum spin Hall effect and topological phase transition in HgTe quantum wells
-
Bernevig, B. A., Hughes. T. A. & Zhang, S.-C. Quantum spin Hall effect and topological phase transition in HgTe quantum wells. Science 314, 1757 (2006).
-
(2006)
Science
, vol.314
, pp. 1757
-
-
Bernevig, B.A.1
Hughes, T.A.2
Zhang, S.-C.3
-
51
-
-
2442537377
-
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
-
Kresse, G. & Furthmuller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169 (1996).
-
(1996)
Phys. Rev. B
, vol.54
, pp. 11169
-
-
Kresse, G.1
Furthmuller, J.2
-
52
-
-
0030190741
-
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
-
Kresse, G. & Furthmuller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15 (1996).
-
(1996)
Comput. Mater. Sci.
, vol.6
, pp. 15
-
-
Kresse, G.1
Furthmuller, J.2
-
53
-
-
25744460922
-
Projector augmented-wave method
-
Blochl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953 (1994).
-
(1994)
Phys. Rev. B
, vol.50
, pp. 17953
-
-
Blochl, P.E.1
-
54
-
-
1842816907
-
Special points for Brillouin-zone integrations
-
Monkhorst, H. J. & Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188 (1976).
-
(1976)
Phys. Rev. B
, vol.13
, pp. 5188
-
-
Monkhorst, H.J.1
Pack, J.D.2
-
55
-
-
80053479878
-
Dispersive and covalent interactions between graphene and metal surfaces from the random phase approximation
-
Olsen, T., Yan, J., Mortensen, J. J. & Thygesen, K. S. Dispersive and covalent interactions between graphene and metal surfaces from the random phase approximation. Phys. Rev. Lett. 107, 156401 (2011).
-
(2011)
Phys. Rev. Lett.
, vol.107
, pp. 156401
-
-
Olsen, T.1
Yan, J.2
Mortensen, J.J.3
Thygesen, K.S.4
-
56
-
-
55149100594
-
First-principles calculations of the ferroelastic transition be-tween rutile-type and CaCl2-type SiO2 at high pressures
-
Togo, A., Oba, F. & Tanaka, I. First-principles calculations of the ferroelastic transition be-tween rutile-type and CaCl2-type SiO2 at high pressures. Phys. Rev. B 78, 134106 (2008).
-
(2008)
Phys. Rev. B
, vol.78
, pp. 134106
-
-
Togo, A.1
Oba, F.2
Tanaka, I.3
-
57
-
-
28444485377
-
Octopus: A first-principles tool for excited electron-ion dynamics
-
Marques, M. A. L., Castro, A., Bertsch, G. F. & Rubio, A. Octopus: a first-principles tool for excited electron-ion dynamics. Comput. Phys. Commun. 60, 151 (2003).
-
(2003)
Comput. Phys. Commun.
, vol.60
, pp. 151
-
-
Marques, M.A.L.1
Castro, A.2
Bertsch, G.F.3
Rubio, A.4
-
58
-
-
0000083717
-
Relativistic separable dual-space Gaussian pseudopotentials from H to Rn
-
Hartwigsen, C., Goedecker, S. & Hutter, J. Relativistic separable dual-space Gaussian pseudopotentials from H to Rn. Phys. Rev. B 58, 3641 (1998).
-
(1998)
Phys. Rev. B
, vol.58
, pp. 3641
-
-
Hartwigsen, C.1
Goedecker, S.2
Hutter, J.3
-
59
-
-
0001456831
-
Time-dependent local-density approximation in real time
-
Yabana, K. & Bertsch, G. F. Time-dependent local-density approximation in real time. Phys. Rev. B 54, 4484 (1996).
-
(1996)
Phys. Rev. B
, vol.54
, pp. 4484
-
-
Yabana, K.1
Bertsch, G.F.2
-
60
-
-
0038573209
-
The electrical properties of black phosphorus
-
Keyes, R. W. The electrical properties of black phosphorus. Phys. Rev. 92, 580 (1953).
-
(1953)
Phys. Rev.
, vol.92
, pp. 580
-
-
Keyes, R.W.1
|