Observation of the spin hall effect in semiconductors

Science

Volumn 306, Issue 5703, 2004, Pages 1910-1913

  Kato, Y K ^a   Myers, R C ^a   Gossard, A C ^a   Awschalom, D D ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; GALLIUM COMPOUNDS; HALL EFFECT; MAGNETIC FIELDS; MICROSCOPIC EXAMINATION; POLARIZATION;

ELECTRON SPIN; KERR ROTATION; SEMICONDUCTOR CHANNEL;

SEMICONDUCTOR MATERIALS;

GALLIUM ARSENIDE; INDIUM;

SEMICONDUCTOR INDUSTRY;

ARTICLE; CONDUCTANCE; CRYSTAL STRUCTURE; ELECTRON; MAGNETIC FIELD; MICROSCOPY; POLARIZATION; PREDICTION; PRIORITY JOURNAL; ROTATION; SEMICONDUCTOR;

EID: 10344244030     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1105514     Document Type: Article

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29. Supported by the Defense Advanced Research Projects Agency, the Defense Microelectronics Activity, and NSF.