Semiconductor to metal transition in bilayer phosphorene under normal compressive strain

Nanotechnology

Volumn 26, Issue 7, 2015, Pages

  Manjanath, Aaditya ^a   Samanta, Atanu ^a   Pandey, Tribhuwan ^a   Singh, Abhishek K ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

DFT; normal compressive strain; phosphorene

Indexed keywords

CARRIER MOBILITY; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; ELECTRONIC PROPERTIES; ENERGY GAP; TRANSPORT PROPERTIES;

BANDGAP MODULATION; BANDGAP TRANSITION; COMPRESSIVE STRAIN; FUNDAMENTAL RESEARCH; HIGH CARRIER MOBILITY; PHOSPHORENE; SEMICONDUCTOR-TO-METAL TRANSITIONS; VERTICAL ELECTRIC FIELDS;

STRAIN;

EID: 84961291571     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/26/7/075701     Document Type: Article

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