Quantum spin hall effect and topological phase transition in HgTe quantum wells

Science

Volumn 314, Issue 5806, 2006, Pages 1757-1761

  Bernevig, B Andrei ^a,b   Hughes, Taylor L ^a   Zhang, Shou Cheng ^a  

^a STANFORD UNIVERSITY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; HALL EFFECT; MERCURY (METAL); PHASE TRANSITIONS; QUANTUM THEORY; TELLURIUM; TOPOLOGY;

ELECTRONIC STATE; HELICAL EDGE; QUANTUM PHASE TRANSITION; QUANTUM SPIN HALL (QSH) EFFECTS;

SEMICONDUCTOR QUANTUM WELLS;

CADMIUM; MERCURY; TELLURIUM;

ELECTRONIC EQUIPMENT; INSULATION; PHASE TRANSITION;

ARTICLE; ENERGY; MATHEMATICAL ANALYSIS; MATHEMATICAL COMPUTING; MATHEMATICAL MODEL; PHASE TRANSITION; PRIORITY JOURNAL; QUANTUM MECHANICS; QUANTUM THEORY; SEMICONDUCTOR; THICKNESS;

EID: 33845708953     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1133734     Document Type: Article

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30. We thank X. Dai, Z. Fang, F. D. M. Haldane, A. H. MacDonald, L. W. Molenkamp, N. Nagaosa, X.-L. Qi, R. Roy, and R. Winkler for discussions. B.A.B. acknowledges the hospitality of the Kavli Institute for Theoretical Physics at the University of California, Santa Barbara, where part of this work was performed. Supported by NSF grant DMR-0342832 and by the U.S. Department of Energy, Office of Basic Energy Sciences, under contract DE-AC03-76SF00S1S.