Identifying defect-tolerant semiconductors with high minority-carrier lifetimes: Beyond hybrid lead halide perovskites

MRS Communications

Volumn 5, Issue 2, 2015, Pages 265-275

  Brandt, Riley E ^a   Stevanović, Vladan ^b,c   Ginley, David S ^b   Buonassisi, Tonio ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c Department of Metallurgical and Materials Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DEFECTS; ELECTRONIC STRUCTURE; LEAD COMPOUNDS; PEROVSKITE;

CARRIER EFFECTIVE MASS; DEFECT TOLERANCE; DEFECT TOLERANT; ELECTRONIC STRUCTURE CALCULATIONS; HALIDE PEROVSKITES; MINORITY CARRIER LIFETIMES; ORBITAL CHARACTER; STATIC DIELECTRIC CONSTANTS;

MATERIALS PROPERTIES;

EID: 84941259368     PISSN: 21596859     EISSN: 21596867     Source Type: Journal    
DOI: 10.1557/mrc.2015.26     Document Type: Article

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