N-BiSI thin films: Selenium doping and solar cell behavior

Journal of Physical Chemistry C

Volumn 116, Issue 47, 2012, Pages 24878-24886

  Hahn, Nathan T ^a   Rettie, Alexander J E ^a   Beal, Susanna K ^a   Fullon, Raymond R ^b   Mullins, C Buddie ^a,b  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBING MATERIALS; CELL BEHAVIORS; DIRECT BAND GAP; ELECTROCHEMICAL DEVICES; FILM PROPERTIES; INDIRECT BAND GAP; PHOTOELECTRODE; POWER CONVERSION EFFICIENCIES; PRECURSOR SOLUTIONS; SOLID STATE SOLAR CELLS; THIN FILM SOLAR CELLS; UV-VIS-NIR DIFFUSE REFLECTANCE SPECTROSCOPY;

CONVERSION EFFICIENCY; ENERGY GAP; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; OPTICAL PROPERTIES; SELENIUM; SEMICONDUCTOR DOPING; SOLAR CELLS; SOLID STATE DEVICES; SPRAY PYROLYSIS; SULFUR; THIN FILMS; THIOUREAS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84870464045     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp3088397     Document Type: Article

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