Characterization of bismuth tri-iodide single crystals for wide band-gap semiconductor radiation detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 652, Issue 1, 2011, Pages 166-169

  Lintereur, Azaree T ^a   Qiu, Wei ^a   Nino, Juan C ^a   Baciak, James ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Bismuth tri iodide; Gamma ray spectroscopy; Radiation detection

Indexed keywords

ALPHA SOURCES; ALPHA SPECTRA; COOLING MECHANISM; EFFECTIVE ATOMIC NUMBER; GAMMA-RAY DETECTION; GAMMA-RAY SPECTROSCOPY; HIGH ENERGY; MERCURIC IODIDE; MODIFIED VERTICAL BRIDGMAN; PALLADIUM ELECTRODES; RADIATION DETECTION; SOLID-STATE PHASE TRANSITION; WIDE-BAND-GAP SEMICONDUCTOR;

ATOMS; BISMUTH; CADMIUM COMPOUNDS; DIFFRACTIVE OPTICS; ELECTRODES; ELECTRON MOBILITY; GAMMA RAYS; GERMANIUM; MATERIALS; MERCURY COMPOUNDS; PALLADIUM; RADIATION DETECTORS;

SINGLE CRYSTALS;

EID: 80052959027     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2010.12.013     Document Type: Conference Paper

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