Quasi-fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence

Journal of Applied Physics

Volumn 116, Issue 17, 2014, Pages

  Katahara, John K ^a   Hillhouse, Hugh W ^a  

^a University of Washington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTROSTATICS; FERMI LEVEL; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; OPEN CIRCUIT VOLTAGE; PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SELENIUM COMPOUNDS;

ABSORPTION CO-EFFICIENT; BROADENING PARAMETERS; ELECTROSTATIC POTENTIAL FLUCTUATIONS; PHOTON-ASSISTED TUNNELING; PHOTOVOLTAIC DEVICES; POTENTIAL FLUCTUATIONS; QUASI-FERMI LEVEL SPLITTING; SUBBAND GAP ABSORPTION;

ENERGY GAP;

EID: 84908611381     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4898346     Document Type: Article

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