Defect tolerant semiconductors for solar energy conversion

Journal of Physical Chemistry Letters

Volumn 5, Issue 7, 2014, Pages 1117-1125

  Zakutayev, Andriy ^a   Caskey, Christopher M ^a,b   Fioretti, Angela N ^a,b   Ginley, David S ^a   Vidal, Julien ^c   Stevanovic, Vladan ^a,b   Tea, Eric ^c   Lany, Stephan ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Department of Geology and Geological Engineering   (United States)

^c 6 quai Watier   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-BONDING STATE; CRYSTALLOGRAPHIC DEFECTS; FUNDAMENTAL BAND GAP; GROWTH CONDITIONS; INTRINSIC DEFECTS; PHOTOELECTROCHEMICAL SOLAR CELL; THEORETICAL CALCULATIONS; VALENCE-BAND MAXIMUMS;

DEFECTS; ENERGY CONVERSION; SOLAR ENERGY; SOLAR POWER GENERATION; VALENCE BANDS;

SEMICONDUCTOR DOPING;

EID: 84898068434     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz5001787     Document Type: Review

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