Growth of Mn-doped ZnO thin films by rf-sputter deposition and lattice relaxation by energetic ion impact

Applied Surface Science

Volumn 350, Issue , 2015, Pages 31-37

  Matsunami, N ^a   Itoh, M ^a   Kato, M ^a   Okayasu, S ^b   Sataka, M ^b   Kakiuchida, H ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Electric, optical and magnetic properties; Growth orientation; Lattice relaxation by energetic ion impact; ZnO:Mn thin films

Indexed keywords

ALUMINA; ALUMINUM OXIDE; DEPOSITION; II-VI SEMICONDUCTORS; ION BOMBARDMENT; IONS; MAGNESIA; MANGANESE COMPOUNDS; OPTICAL LATTICES; OPTICAL PROPERTIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SILICA; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE;

C-AXIS ORIENTATIONS; ENERGETIC ION; GROWTH ORIENTATIONS; HEXAGONAL STRUCTURES; LATTICE RELAXATION; MN-DOPED ZNO THIN FILMS; RADIO-FREQUENCY (RF) MAGNETRON; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 84938745248     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2015.04.016     Document Type: Conference Paper

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