Effect of dopant concentration on the structural, electrical and optical properties of Mn-doped ZnO films

Thin Solid Films

Volumn 519, Issue 15, 2011, Pages 5078-5081

  Ruan, H B ^a,b   Fang, L ^a   Li, D C ^a   Saleem, M ^a   Qin, G P ^b   Kong, C Y ^b  

^a CHONGQING UNIVERSITY   (China)

^b CHONGQING NORMAL UNIVERSITY   (China)

Author keywords

Dopant concentration; Electrical property; Magnetron sputtering; Mn doped ZnO; Optical property

Indexed keywords

C-AXIS ORIENTATIONS; CHEMICAL STATE; CRYSTALLINE QUALITY; DIVALENT STATE; DOPANT CONCENTRATIONS; EFFECT OF DOPANTS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL PROPERTY; HALL EFFECT MEASUREMENT; MN CONCENTRATIONS; MN CONTENT; MN-DOPED ZNO; MN-DOPING; PHOTOLUMINESCENCE SPECTRUM; QUARTZ GLASS SUBSTRATES; RADIO FREQUENCY MAGNETRON SPUTTERING; ROOM TEMPERATURE; SINGLE PHASE; WURTZITE STRUCTURE; ZNO;

ELECTRIC PROPERTIES; MANGANESE; MANGANESE OXIDE; PHOTOLUMINESCENCE; QUARTZ; SEMICONDUCTOR DOPING; SUBSTRATES; X RAY DIFFRACTION; ZINC; ZINC OXIDE; ZINC SULFIDE;

OPTICAL PROPERTIES;

EID: 79957654492     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.132     Document Type: Conference Paper

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