Electrical property modifications of In-doped ZnO films by ion irradiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 19, 2010, Pages 3071-3075

  Matsunami, N ^a   Fukushima, J ^a   Sataka, M ^b   Okayasu, S ^b   Sugai, H ^b   Kakiuchida, H ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Electrical conductivity; In doped ZnO; Ion induced dopant replacement; Optical absorption

Indexed keywords

ATOMIC STRUCTURE; DOPED ZNO; ELECTRICAL CONDUCTIVITY; ELECTRICAL PROPERTY; ION IRRADIATION; ION IRRADIATION EFFECTS; LATTICE SITES; OPTICAL ABSORPTION; TRANSPARENT SEMICONDUCTOR; TRIVALENT ELEMENTS;

ABSORPTION; ELECTRIC CONDUCTIVITY; INDIUM; IONS; IRRADIATION; LIGHT ABSORPTION; METALLIC FILMS; OPTICAL PROPERTIES; ZINC; ZINC OXIDE;

DOPING (ADDITIVES);

EID: 77956171917     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.05.045     Document Type: Conference Paper

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