Engineering Optical and Electronic Properties of WS2 by Varying the Number of Layers

ACS Nano

Volumn 9, Issue 7, 2015, Pages 6854-6860

  Kim, Hyun Cheol ^a   Kim, Hakseong ^a   Lee, Jae Ung ^b   Lee, Han Byeol ^a   Choi, Doo Hua ^a   Lee, Jun Ho ^a   Lee, Wi Hyoung ^a   Jhang, Sung Ho ^a   Park, Bae Ho ^a   Cheong, Hyeonsik ^b   Lee, Sang Wook ^a   Chung, Hyun Jong ^a  

^a Konkuk University   (South Korea)

^b Sogang University   (South Korea)

Author keywords

band alignment; bandgap; Schottky barrier; transition metal dichalcogenide; tungsten disulfide

Indexed keywords

BINDING ENERGY; CHROMIUM COMPOUNDS; ELECTRONIC PROPERTIES; ENERGY GAP; MATERIALS PROPERTIES; REFRACTIVE INDEX; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICA; SULFUR COMPOUNDS; TRANSITION METALS; TUNGSTEN COMPOUNDS;

BAND ALIGNMENTS; EXCITON-BINDING ENERGY; EXTINCTION COEFFICIENTS; OPTICAL AND ELECTRONIC PROPERTIES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; TRANSITION METAL DICHALCOGENIDES; TUNGSTEN DISULFIDE;

GOLD COMPOUNDS;

EID: 84938149998     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b01727     Document Type: Article

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