Graphene for true ohmic contact at metal-semiconductor junctions

Nano Letters

Volumn 13, Issue 9, 2013, Pages 4001-4005

  Byun, Kyung Eun ^a   Chung, Hyun Jong ^a   Lee, Jaeho ^a   Yang, Heejun ^a,b   Song, Hyun Jae ^a   Heo, Jinseong ^a   Seo, David H ^a   Park, Seongjun ^a   Hwang, Sung Woo ^a   Yoo, Inkyeong ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

^b CNRS   (France)

Author keywords

Graphene; metal semiconductor junction; Ni Si junction; Ohmic contact; Schottky barrier

Indexed keywords

ELECTRONIC DEVICE; METAL-SEMICONDUCTOR JUNCTIONS; NI-SI JUNCTION; SCHOTTKY; SCHOTTKY BARRIERS; SCHOTTKY CHARACTERISTICS; SI-DOPING; SINGLE LAYER;

CONTACT RESISTANCE; ELECTRIC CONTACTORS; GRAPHENE; METALS; NICKEL; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SILICON;

SEMICONDUCTOR JUNCTIONS;

EID: 84884249960     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl402367y     Document Type: Article

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