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Applied Physics Letters

Volumn 101, Issue 26, 2012, Pages

Schottky-barrier solar cell based on layered semiconductor tungsten disulfide nanofilm

(4) Shanmugam, Mariyappan a Bansal, Tanesh a Durcan, Chris A a Yu, Bin a

a STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MODE; ASSEMBLING PROCESS; ATOMIC VIBRATION; INTERFACE DEFECTS; LAYERED SEMICONDUCTORS; LOW DENSITY; MOTT-SCHOTTKY; NANO FILMS; OUT-OF-PLANE; PHOTON ABSORPTIONS; RAMAN SIGNATURES; SCHOTTKY BARRIERS; TUNGSTEN DISULFIDE; WAVELENGTH RANGES;

CONVERSION EFFICIENCY; NANOSTRUCTURED MATERIALS; SOLAR CELLS; TUNGSTEN; VAPORS;

GOLD;

EID: 84871798143 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4773525 Document Type: Article

Times cited : (44)

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