Active gate driver for fast switching and cross-talk suppression of SiC devices in a phase-leg configuration

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn 2015-May, Issue May, 2015, Pages 774-781

  Zhang, Zheyu ^a   Wang, Fred ^a   Tolbert, Leon M ^a   Blalock, Benjamin J ^a   Costinett, Daniel J ^a  

^a University of Tennessee   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSSTALK; ENERGY DISSIPATION; POWER SEMICONDUCTOR DEVICES; SILICON CARBIDE; SWITCHING; THRESHOLD VOLTAGE; VANADIUM COMPOUNDS;

INTRINSIC PROPERTY; OPERATING CONDITION; PROTOTYPE CIRCUITS; SILICON CARBIDES (SIC); SWITCHING ENERGY; SWITCHING SPEED; SWITCHING TIME; SWITCHING TRANSIENT;

MOSFET DEVICES;

EID: 84937948972     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2015.7104437     Document Type: Conference Paper

References (15)

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