Impact of ringing on switching losses of wide band-gap devices in a phase-leg configuration

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2014, Pages 2542-2549

  Zhang, Zheyu ^a   Guo, Ben ^a   Wang, Fred ^a   Tolbert, Leon M ^a   Blalock, Benjamin J ^a   Liang, Zhenxian ^b   Ning, Puqi ^b  

^a University of Tennessee   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84900449995     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2014.6803661     Document Type: Conference Paper

References (24)

1. I. Josifovic, J. Popovic-Gerber, J. A. Ferreira, "Improving SiC JFET switching behavior under influence of circuit parasitics," in IEEE Trans. Power Electronics, vol. 27, no. 8, Aug. 2012, pp. 3843-3854
2. B. Wrzecionko, D. Bortis, J. Biela, J. W. Kolar, "Novel AC-coupled gate driver for ultrafast switching of normally off SiC JFETs," in IEEE Trans. Power Electronics, vol. 27, no. 7, July 2012, pp. 3452-3463
3. F. Xu, T. J. Han, D. Jiang, L. M. Tolbert, F. Wang, J. Nagashima, S. J. Kim, S. Kulkarni, F. Barlow, "Development of a SiC JFET-based six-pack power module for a fully integrated inverter," in IEEE Trans. Power Electronics, vol. 28, no. 3, March 2013, pp. 1464-1478
4. P. Ning, F. Wang, K. D. Ngo, "High-temperature SiC power module electrical evaluation procedure," in IEEE Trans. Power Electronics, vol. 26, no. 11, Nov. 2011, pp. 3079-3083
5. Y. Zushi, S. Sato, K. Matsui, Y. Murakami, S. Tanimoto, "A novel gate assist circuit for quick and stable driving of SiC-JFETs in a 3-phase inverter," in Proc. IEEE Applied Power Electronics Conference and Exposition, Feb. 2012, pp. 1734-1739
6. W. Zhang, Z. Xu, Z. Zhang, F. Wang, L. M. Tolbert, and B. J. Blalock, "Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter," in Proc. IEEE Energy Conversion Congress and Exposition, 15-19 Sept. 2013, pp. 3571-3578
7. X. Gong, J. Popovic-Gerber, J. A. Ferreira, "Modeling and reduction of conducted EMI of inverters with SiC JFETs on insulated metal substrate," in IEEE Trans. Power Electronics, vol. 28, no. 7, July. 2013, pp. 3138-3146
8. Q. Liu, S. Wang, A. C. Baisden, F. Wang, and D. Boroyevich, "EMI suppression in voltage source converters by utilizing dc-link decoupling capacitors," in IEEE Trans. Power Electronics, vol. 22, no. 4, July. 2007, pp. 1417-1428
9. O. Alatise, N. Parker-Allotey, D. Hamilton, and P. Mawby, "The impact of parasitic inductance on the performance of Silicon-Carbide Schottky barrier diodes," in IEEE Trans. Power Electronics, vol. 27, no. 8, Aug. 2012, pp. 3826-3833
10. A. Lemmon, M. Mazzola, J. Gafford, and C. Parker, "Stability considerations for Silicon Carbide field-effect transistors," in IEEE Trans. Power Electronics, vol. 28, no. 10, Oct. 2013, pp. 4453-4459
11. Z. Zhang, W. Zhang, F. Wang, L. M. Tolbert, B. J. Blalock, "Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration," in Proc. IEEE Energy Conversion Congress and Exposition, 15-20 Sept. 2012, pp. 3950-3955
12. Erickson, W. Robert, Fundamentals of power electronics. Secaucus, NJ, USA: Kluwer Academic Publisher, 2000
13. Y. Ren, M. Xu, J. Zhou, and F. C. Lee, "Analytical loss model of power MOSFET," in IEEE Trans. Power Electronics, vol. 21, no. 2, March. 2006, pp. 310-319
14. M. Rodriguez, A. Rodriguez, P. Fernandez, D. G. Lamar, and J. S. Zuniga, "An insight into the switching process of power MOSFETs: an improved analytical losses model," in IEEE Trans. Power Electronics, vol. 25, no. 6, June. 2010, pp. 1626-1640
15. Y. Xiong, S. Sun, H. Jia, P. Shea, and Z. J. Shen, "New physical insights on power MOSFET switching losses," in IEEE Trans. Power Electronics, vol. 24, no. 2, Feb. 2009, pp. 525-531
16. W. Eberle, Z. Zhang, Y. Liu, and P. C. Sen, "A practical switching loss model for buck voltage regulator," in IEEE Trans. Power Electronics, vol. 24, no. 3, March. 2009, pp. 700-713
17. J. Wang, R. T. Li, and H. S. Chung, "An investigation into the effects of the gate drive resistance on the losses of the MOSFET-Snubber-Diode configuration," in IEEE Trans. Power Electronics, vol. 27, no. 5, May. 2012, pp. 2657-2672
18. S. Xu, W. Sun, D. Sun, "Analysis and design optimization of brushless DC motor's driving circuit considering the Cdv/dt induced effect," in Proc. IEEE Energy Conversion Congress and Exposition, 12-16 Sept. 2010, pp. 2091-2095
19. Q. Zhao, G. Stojcic, "Characterization of Cdv/dt induced power loss in synchronous buck DC-DC converter," in IEEE Trans. Power Electronics, vol. 22, no. 4, Jul. 2007, pp. 1508-1513
20. R. K. Burra, S. K. Mazumder, R. Huang, "dv/dt related spurious gate turn-on of bidirectional switches in a high-frequency cycloconverter," in IEEE Trans. Power Electronics, vol. 20, no. 6, Nov. 2005, pp. 1237-1243
21. T. Wu, "Cdv/dt induced turn-on in synchronous buck regulations," Tech. Rep., International Rectifier, 2007 [Online]. Available: http://www. irf. com/
22. A. Elbanhawy, "MOSFET susceptibility to cross conduction," in Proc. Power Electron. Technol., Apr. 2005, pp. 26-33
23. Fairchild Semiconductor AN-7019, "Limiting Cross-Conduction Current in Synchronous Buck Converter Designs," [Online]. Available: http://www. fairchildsemi. com/an/AN/AN-7019. pdf
24. P. Vekataraghavan, B. Baliga, "The dV/dt capability of MOS-gated thyristors," in IEEE Trans. Power Electronics, vol. 13, no. 4, Jul. 1998, pp. 660-666.