Evaluation and comparison of silicon and gallium nitride power transistors in LLC resonant converter

2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012

Volumn , Issue , 2012, Pages 1362-1366

  Zhang, Weimin ^a   Long, Yu ^a   Zhang, Zheyu ^a   Wang, Fred ^a   Tolbert, Leon M ^a   Blalock, Benjamin J ^a   Henning, Stephan ^b   Wilson, Chris ^b   Dean, Robert ^b  

^a University of Tennessee   (United States)

^b AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL APPROACH; BODY DIODE; BODY-DIODE CONDUCTION; CONVERTER EFFICIENCY; DEAD TIME; DEVICE CHARACTERISTICS; DEVICE PARAMETERS; DEVICE PERFORMANCE; DEVICE SELECTION; FORWARD VOLTAGE DROPS; FULL-LOAD; FULL-LOAD EFFICIENCY; LLC RESONANT CONVERTER; PEAK EFFICIENCY; POWER DEVICES; POWER MOSFETS; POWER TRANSISTORS; SI DEVICES; SI-BASED; TOTAL LOSS; TRANSFORMER LOSS;

DC-DC CONVERTERS; EFFICIENCY; ENERGY CONVERSION; EXHIBITIONS; GALLIUM ALLOYS; POWER ELECTRONICS; SILICON; SOFT SWITCHING;

GALLIUM NITRIDE;

EID: 84870948862     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2012.6342657     Document Type: Conference Paper

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