Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration

2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012

Volumn , Issue , 2012, Pages 3950-3955

  Zhang, Zheyu ^a   Zhang, Weimin ^a   Wang, Fred ^a   Tolbert, Leon M ^a   Blalock, Benjamin J ^a  

^a University of Tennessee   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FAST SWITCHING; GATE DRIVERS; GATE VOLTAGES; JUNCTION CAPACITANCES; LOOP IMPEDANCE; NITRIDE TRANSISTORS; OPERATING CONDITION; POWER SEMICONDUCTOR DEVICES; SWITCH SPEED; SWITCHING SPEED; SWITCHING TRANSIENT; WIDE BAND GAP;

CROSSTALK; ENERGY CONVERSION; ENERGY GAP; EXHIBITIONS; GALLIUM NITRIDE; SPEED;

SWITCHING;

EID: 84870905810     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2012.6342164     Document Type: Conference Paper

References (19)

1. M. Danilovic, Z. Chen, R. Wang, F. Luo, D. Boroyevich, P. Mattavelli, "Evaluation of the switching characteristics of a Gallium-Nitride transistor," in Proc. IEEE Energy Conversion Congress and Exposition 2011, pp. 2681-2688, 17-22 Sept. 2011.
2. M. Acanski, J. Popovic-Gerber, J.A. Ferreira, "Comparison of Si and GaN power devices used in PV module integrated converters," in Proc. IEEE Energy Conversion Congress and Exposition 2011, pp. 1217-1223, 17-22 Sept. 2011.
3. I. Josifovic, J. Popovic-Gerber, J.A. Ferreira, "Improving SiC JFET switching behavior under influence of circuit parasitics," in IEEE Trans. Power Electronics, vol. 27, no. 8, Aug. 2012, pp. 3843-3854.
4. F. Xu, D. Jiang, J. Wang, F. Wang, L. M. Tolbert, T. J. Han, and S. J. Kim, "Characterization of a high temperature multichip SiC JFET-based module," in Proc. IEEE Energy Conversion Congress and Exposition 2011, pp. 2405-2412. 17-22 Sept. 2011.
5. F. Merienne, J. Roudet, JL. Schanen, "Switching disturbance due to source inductance for a power MOSFET: analysis and solutions," in IEEE Power Electronics Specialists Conference 1996, vol. 2, 1996, pp. 1743-1747.
6. Y. Xiao, H. Shah, T. P. Chow, R. J. Gutmann, "Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics," in Proc. IEEE Applied Power Electronics Conference and Exposition 2004, vol. 1, pp. 516-521.
7. Z. Chen, D. Boroyevich, R. Burgos, "Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics," in Proc. Int. Power Electron. Conf., Jun. 2010, pp. 164-169.
8. W. Teulings, J. L. Schanen, J. Roudet, "MOSFET switching behavior under influence of PCB stray inductance," in Proc. IEEE Industry Applications Society 1996, vol. 3, pp. 1449-1453.
9. H. Zhu, A.R. Hefner, J.S. Lai, "Characterization of power electronics system interconnect parasitics using time domain reflectomentry," in IEEE Trans. Power Electronics, vol. 14, no. 4, Jul. 1999, pp. 622-628.
10. S. Xu, W. Sun, D. Sun, "Analysis and design optimization of brushless DC motor's driving circuit considering the Cdv/dt induced effect," in Proc. IEEE Energy Conversion Congress and Exposition 2010, 12-16 Sept. 2010, pp. 2091-2095.
11. Q. Zhao, G. Stojcic, "Characterization of Cdv/dt induced power loss in synchronous buck DC-DC converter," in IEEE Trans. Power Electronics, vol. 22, no. 4, Jul. 2007, pp. 1508-1513.
12. R. K. Burra, S.K. Mazumder, R. Huang, "DV/DT related spurious gate turn-on of bidirectional switches in a high-frequency cycloconverter," in IEEE Trans. Power Electronics, vol. 20, no. 6, Nov. 2005, pp. 1237-1243.
13. T. Wu, "Cdv/dt induced turn-on in synchronous buck regulations," Tech. Rep., International Rectifier, 2007 [Online]. Available: http://www.irf.com/
14. A. Elbanhawy, "MOSFET susceptibility to cross conduction," in Proc. Power Electron. Technol., Apr. 2005, pp. 26-33.
15. Fairchild Semiconductor AN-7019, "Limiting Cross-Conduction Current in Synchronous Buck Converter Designs," http://www.fairchildsemi.com/an/AN/ AN-7019.pdf#page=1
16. P. Vekataraghavan, B. Baliga, "The dV/dt capability of MOS-gated thyristors," in IEEE Trans. Power Electronics, vol. 13, no. 4, Jul. 1998, pp. 660-666.
17. Z. Xu, M. Li, F. Wang, and Z. Liang, "Investigation of Si IGBT operation at 200°C for traction application," in Proc. IEEE Energy Conversion Congress and Exposition 2011, pp. 2397-2404. 17-22 Sept. 2011.
18. http://epc-co.com/epc/
19. http://www.cree.com/products/power-docs2.asp