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Nanoscale

Volumn 7, Issue 29, 2015, Pages 12291-12296

Few-layered titanium trisulfide (TiS3) field-effect transistors

(6) Lipatov, Alexey a Wilson, Peter M a Shekhirev, Mikhail a Teeter, Jacob D a Netusil, Ross a Sinitskii, Alexander a

a UNIVERSITY OF NEBRASKA LINCOLN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESIVES; ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; FIELD EFFECT TRANSISTORS; INORGANIC COMPOUNDS; LAYERED SEMICONDUCTORS; TRANSITION METALS;

DEVICE APPLICATION; ELECTRONIC MATERIALS; ELECTRONIC TRANSPORT; FIELD EFFECT TRANSISTOR (FETS); FIELD-EFFECT MOBILITIES; SUBTHRESHOLD SWING; TRANSITION METAL CHALCOGENIDES; TWO DIMENSIONAL (2 D);

TITANIUM COMPOUNDS;

EID: 84937564237 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c5nr01895a Document Type: Article

Times cited : (138)

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