Graphene nanoribbon devices produced by oxidative unzipping of carbon nanotubes

ACS Nano

Volumn 4, Issue 9, 2010, Pages 5405-5413

  Sinitskii, Alexander ^a   Dimiev, Ayrat ^a   Kosynkin, Dmitry V ^a   Tour, James M ^a,b  

^a RICE UNIVERSITY   (United States)

^b RICE UNIVERSITY   (United States)

Author keywords

carbon nanotubes; field effect transistors; grapheme; graphene nanoribbons; nonvolatile memories

Indexed keywords

ALIGNMENT TECHNIQUE; GRAPHEME; GRAPHENE NANO-RIBBON; GRAPHENE NANORIBBONS; MULTILAYERING; NON-VOLATILE MEMORIES; SINGLE CHIPS; TRANSFER CHARACTERISTICS;

CARBON NANOTUBES; GRAPHENE; HUBBARD MODEL; SILICON COMPOUNDS; SILICON OXIDES;

FIELD EFFECT TRANSISTORS;

EID: 77957300252     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn101019h     Document Type: Article

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