Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz

Nature Communications

Volumn 6, Issue , 2015, Pages

  Zhang, Jiawei ^a   Li, Yunpeng ^b   Zhang, Binglei ^b   Wang, Hanbin ^b   Xin, Qian ^b   Song, Aimin ^a,b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; INDIUM; OXIDE; ZINC;

BENCHMARKING; ELECTRODE; ELECTRONIC EQUIPMENT; GALLIUM; GPS; INDIUM; MOBILE COMMUNICATION; OXIDE; PLASTIC; SUPERCONDUCTIVITY; THIN SECTION; ZINC;

ALTERNATING CURRENT; ARTICLE; DIODE; MOBILE PHONE; POWER SUPPLY; ROENTGEN SPECTROSCOPY; SCHOTTKY DIODE; SEMICONDUCTOR; WIRELESS COMMUNICATION;

EID: 84936754252     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms8561     Document Type: Article

References (40)

1. Cowhey, P. F. & Aronson, J. D. Transforming Global Information and Communication Markets: The Political Economy of Innovation (The MIT Press, 2009).
2. Nomura, K. et al. Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor. Science 300, 1269-1272 (2003).
3. Nomura, K. et al. Room-temperature fabrication of transparent flexible thinfilm transistors using amorphous oxide semiconductors. Nature 432, 488-492 (2004).
4. Yabuta, H. et al. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering. Appl. Phys. Lett. 89, 112123-112123 (2006).
5. Mitsuru, N. et al. Flexible high-performance amorphous ingazno 4 thin-film transistors utilizing excimer laser annealing. Jpn. J. Appl. Phys. 48, 081607 (2009).
6. Lorenz, M. et al. Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films. Appl. Phys. Lett. 97, 243506 (2010).
7. Fortunato, E., Barquinha, P. & Martins, R. Oxide semiconductor thin-film transistors: a review of recent advances. Adv. Mater. 24, 2945-2986 (2012).
8. Park, J. S., Maeng, W.-J., Kim, H.-S. & Park, J.-S. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices. Thin Solid Films 520, 1679-1693 (2012).
9. Kabuo, H. et al. An 80-MOPS-peak high-speed and low-power-consumption 16-b digital signal processor. IEEE J. Solid-State Circuits 31, 494-503 (1996).
10. Chen, W.-C. et al. Room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diodes and high-frequency diode rectifiers. J. Phys. D: Appl. Phys. 47, 365101 (2014).
11. Lin, C.-Y. et al. High-frequency polymer diode rectifiers for flexible wireless power-transmission sheets. Org. Electron. 12, 1777-1782 (2011).
12. Cvetkovic, N. V. et al. Organic half-wave rectifier fabricated by stencil lithography on flexible substrate. Microelectron. Eng. 100, 47-50 (2012).
13. Lilja, K. E., Bäcklund, T. G., Lupo, D., Hassinen, T. & Joutsenoja, T. Gravure printed organic rectifying diodes operating at high frequencies. Org. Electron. 10, 1011-1014 (2009).
14. Pal, B. N. et al. Pentacene-zinc oxide vertical diode with compatible grains and 15-MHz rectification. Adv. Mater. 20, 1023-1028 (2008).
15. Seo, J.-H. et al. Investigation of various mechanical bending strains on characteristics of flexible monocrystalline silicon nanomembrane diodes on a plastic substrate. Microelectron. Eng. 110, 40-43 (2013).
16. Qin, G. et al. Fabrication and characterization of flexible microwave singlecrystal germanium nanomembrane diodes on a plastic substrate. IEEE Electron Dev. Lett. 34, 160-162 (2013).
17. Sani, N. et al. All-printed diode operating at 1.6 GHz. Proc. Natl Acad. Sci. USA 111, 11943-11948 (2014).
18. Kleemann, H. et al. Organic pin-diodes approaching ultra-high-frequencies. Org. Electron. 13, 1114-1120 (2012).
19. Steudel, S. et al. Ultra-high frequency rectification using organic diodes. IEEE Int. Electron Dev. Meet. 2008, 1-4 (2008).
20. Im, D., Moon, H., Shin, M., Kim, J. & Yoo, S. Towards gigahertz operation: ultrafast low turn-on organic diodes and rectifiers based on C60 and tungsten oxide. Adv. Mater. 23, 644-648 (2011).
21. Toshio, K., Kenji, N. & Hideo, H. Present status of amorphous In-Ga-Zn-O thin-film transistors. Sci. Technol. Adv. Mater. 11, 044305 (2010).
22. Kamiya, T. & Hosono, H. Material characteristics and applications of transparent amorphous oxide semiconductors. NPG Asia Mater. 2, 15-22 (2010).
23. Park, J.-S., Kim, H. & Kim, I. D. Overview of electroceramic materials for oxide semiconductor thin film transistors. J. Electroceram. 32, 117-140 (2014).
24. Lee, D. H., Nomura, K., Kamiya, T. & Hosono, H. Diffusion-limited a-IGZO/Pt Schottky junction fabricated at 200 °C on a flexible substrate. IEEE Electron Dev. Lett. 32, 1695-1697 (2011).
25. Chasin, A. et al. UHF IGZO Schottky diode. IEEE Int. Electron Dev. Meet. 2012, 12.14.11-12.14.14 (2012).
26. Chasin, A. et al. Gigahertz operation of a-IGZO Schottky diodes. IEEE Trans. Electron Dev. 60, 3407-3412 (2013).
27. Chasin, A. et al. An integrated a-IGZO UHF energy harvester for passive RFID tags. IEEE Trans. Electron Dev. 61, 3289-3295 (2014).
28. Xin, Q., Yan, L., Luo, Y. & Song, A. Study of breakdown voltage of indiumgallium-zinc-oxide-based Schottky diode. Appl. Phys. Lett. 106, 113506 (2015).
29. Kim, H., Kin, S., Kim, K.-K., Lee, S.-N. & Ahn, K.-S. Electrical characteristics of Pt Schottky contacts fabricated on amorphous gallium indium zinc oxides. Jpn J. Appl. Phys. 50, 105702 (2011).
30. Chasin, A. et al. High-performance a-In-Ga-Zn-O Schottky diode with oxygentreated metal contacts. Appl. Phys. Lett. 101, 113505 (2012).
31. Simons, R. Coplanar Waveguide Circuits, Components, and Systems (John Wiley, 2001).
32. Yim, J.-R. et al. Effects of metal electrode on the electrical performance of amorphous InGaZnO thin film transistor. Jpn. J. Appl. Phys. 51, 029201 (2012).
33. Barquinha, P., Pereira, L., Gonçalves, G., Martins, R. & Fortunato, E. The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs. Electrochem. Solid-State Lett. 11, H248-H251 (2008).
34. Rhoderick, E. H. & Williams, R. H. Metal-Semiconductor Contacts 2nd edn (Oxford Univ. Press, 1988).
35. Sze, S. M. & Ng, K. K. Physics of Semiconductor Devices 3rd edn (Wiley-Interscience, 2007).
36. Olziersky, A. et al. Role of Ga2O3-In2O3-ZnO channel composition on the electrical performance of thin-film transistors. Mater. Chem. Phys. 131, 512-518 (2011).
37. Werner, J. H. & Guttler, H. H. Barrier inhomogeneities at Schottky contacts. J. Appl. Phys. 69, 1522-1533 (1991).
38. Finkenzeller, K. RFID Handbook (John Wiley & Sons, Ltd, 2003).
39. Nayak, P. K. et al. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer. Sci. Rep. 4, 4672 (2014).
40. Yin, H. et al. Bootstrapped ring oscillator with propagation delay time below 1.0 nsec/stage by standard 0.5 mm bottom-gate amorphous Ga2O3-In2O3-ZnO TFT technology. Int. Electron Dev. Meet. 2008, 1-4 (2008).