Diffusion-limited a-IGZO/Pt schottky junction fabricated at 200°c on a flexible substrate

IEEE Electron Device Letters

Volumn 32, Issue 12, 2011, Pages 1695-1697

  Lee, Dong Hee ^a   Nomura, Kenji ^a   Kamiya, Toshio ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO); Amorphous oxide semiconductor (AOS); Flexible device; Schottky diode

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; DIFFUSION LIMITED; FLEXIBLE DEVICE; FLEXIBLE SUBSTRATE; IDEALITY FACTORS; PERCOLATION MODELS; POLYIMIDE SUBSTRATE; PT ELECTRODE; RECTIFICATION RATIO; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SCHOTTKY JUNCTIONS; TEMPERATURE DEPENDENCE; THERMIONIC EMISSION THEORY;

FABRICATION; PLATINUM; POLYIMIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SOLVENTS; SUBSTRATES; THERMIONIC EMISSION; ZINC;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 81855185546     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2167123     Document Type: Article

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