Gigahertz operation of a-IGZO schottky diodes

IEEE Transactions on Electron Devices

Volumn 60, Issue 10, 2013, Pages 3407-3412

  Chasin, Adrian ^a,b   Nag, Manoj ^a,b   Bhoolokam, Ajay ^a,b   Myny, Kris ^a   Steudel, Soeren ^a   Schols, Sarah ^a   Genoe, Jan ^a   Gielen, Georges ^b   Heremans, Paul ^a,b  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO); amorphous oxide semiconductor (AOS); doping; radio frequency; Schottky diode

Indexed keywords

AMORPHOUS INDIUM GALLIUM ZINC OXIDES (A IGZO); AMORPHOUS OXIDE SEMICONDUCTORS; DOPING CONCENTRATION; ELECTRICAL MEASUREMENT; RADIO FREQUENCIES; SCHOTTKY DIODES; SEMICONDUCTOR LAYERS; VERTICAL SCHOTTKY DIODES;

CUTOFF FREQUENCY; DIODES; DOPING (ADDITIVES); ELECTRIC RECTIFIERS; OHMIC CONTACTS; OPTIMIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

SEMICONDUCTOR DIODES;

EID: 84884676549     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2275250     Document Type: Article

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