Towards gigahertz operation: Ultrafast low turn-on organic diodes and rectifiers based on C60 and tungsten oxide

Advanced Materials

Volumn 23, Issue 5, 2011, Pages 644-648

  Im, Dongmo ^a   Moon, Hanul ^a   Shin, Minchul ^a   Kim, Joungho ^a   Yoo, Seunghyup ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HEXAMETHYLDISILAZANE; HIGH ELECTRON MOBILITY; IDEAL DIODES; LOW VOLTAGES; ORGANIC DIODES; RECTIFICATION RATIO; TUNGSTEN OXIDE; TURN ON VOLTAGE; ULTRA-FAST; ULTRA-HIGH FREQUENCY;

DIODES; ELECTRON MOBILITY; TUNGSTEN; TUNGSTEN COMPOUNDS;

ELECTRIC RECTIFIERS;

FULLERENE C60; FULLERENE DERIVATIVE; ORGANIC COMPOUND; OXIDE; TUNGSTEN; TUNGSTEN OXIDE;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; CONFORMATION; ELECTRICITY; ELECTRODE; TIME;

ELECTRICITY; ELECTRODES; FULLERENES; MODELS, MOLECULAR; MOLECULAR CONFORMATION; ORGANIC CHEMICALS; OXIDES; TIME FACTORS; TUNGSTEN;

EID: 79952586175     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201002246     Document Type: Article

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