Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride

Journal of the American Chemical Society

Volumn 137, Issue 22, 2015, Pages 7051-7054

  Zhang, Mei ^a   Zhu, Yiming ^a,b   Wang, Xinsheng ^a   Feng, Qingliang ^a,c   Qiao, Shanlin ^a   Wen, Wen ^a   Chen, Yanfeng ^a   Cui, Menghua ^a   Zhang, Jin ^c   Cai, Congzhong ^b   Xie, Liming ^a  

^a NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

^b CHONGQING UNIVERSITY   (China)

^c PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE; MOLYBDENUM; MONOLAYERS; NITRIDES; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; ZIRCONIUM;

CONTROLLED SYNTHESIS; EVAPORATION TEMPERATURE; FIELD EFFECT TRANSISTOR (FETS); HEXAGONAL BORON NITRIDE; NUMBER OF LAYERS; STACKING ANGLE; TRANSPORT BEHAVIOR; TUNNELING CURRENT;

FIELD EFFECT TRANSISTORS;

BORON DERIVATIVE; BORON NITRIDE; SULFUR; SULFUR DERIVATIVE; UNCLASSIFIED DRUG; ZIRCONIUM DERIVATIVE;

ARTICLE; EVAPORATION; FIELD EFFECT TRANSISTOR; PARTICLE SIZE; PRECURSOR; SYNTHESIS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 84935918505     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/jacs.5b03807     Document Type: Article

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