SCOPUS 정보 검색 플랫폼

RSC Advances

Volumn 4, Issue 15, 2014, Pages 7396-7401

Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: First-principles calculations

(3) Li, Yan a Kang, Jun a Li, Jingbo a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP TRANSITION; DIELECTRIC FUNCTIONS; ELECTRONIC AND OPTICAL PROPERTIES; FIRST PRINCIPLES METHOD; FIRST-PRINCIPLES CALCULATION; GENERALIZED GRADIENT APPROXIMATIONS; IN-PLANE STIFFNESS; PARALLEL POLARIZATION;

CALCULATIONS; ELECTRONIC STRUCTURE; ENERGY GAP; OPTICAL PROPERTIES; STRAIN;

MONOLAYERS;

EID: 84892944360 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c3ra46090h Document Type: Article

Times cited : (112)

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