SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 431, Issue 1, 1999, Pages

Nanometer-scale Si selective growth on Ga-adsorbed voids in ultrathin SiO2 films

(4) Nitta, Yoshiki a Shibata, Motoshi a,b Fujita, Ken a Ichikawa, Masakazu a

a NATL INST FOR ADV INTERDISC RES (Japan)

b OKI ELECTRIC INDUSTRY CO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; NANOSTRUCTURED MATERIALS; NUCLEATION; OXIDATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA; SURFACE STRUCTURE; ULTRATHIN FILMS;

SELECTIVE GROWTH; TWO DIMENSIONAL NUCLEATION; VOID;

EPITAXIAL GROWTH;

EID: 0032682404 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(99)00511-7 Document Type: Article

Times cited : (11)

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