Plasma-Assisted Synthesis of High-Mobility Atomically Layered Violet Phosphorus

ACS Applied Materials and Interfaces

Volumn 7, Issue 25, 2015, Pages 13723-13727

  Tsai, Hsu Sheng ^a   Lai, Chih Chung ^a   Hsiao, Ching Hung ^a   Medina, Henry ^a   Su, Teng Yu ^a   Ouyang, Hao ^a   Chen, Tai Hsiang ^a   Liang, Jenq Horng ^a   Chueh, Yu Lun ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

mobility; plasma; selective reaction; two dimensional materials; violet phosphorus

Indexed keywords

EID: 84934343528     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b03803     Document Type: Article

References (19)

1. Geim, A. K.; Novoselov, K. S. The Rise of Graphene Nat. Mater. 2007, 6, 183-191
2. Orlita, M.; Faugeras, C.; Plochocka, P.; Neugebauer, P.; Martinez, G.; Maude, D. K.; Barra, A. L.; Sprinkle, M.; Berger, C.; de Heer, W. A.; Potemski, M. Approaching the Dirac Point in High-Mobility Multilayer Epitaxial Graphene Phys. Rev. Lett. 2008, 101, 267601
3. Nair, R. R.; Blake, P.; Grigorenko, A. N.; Novoselov, K. S.; Booth, T. J.; Stauber, T.; Peres, N. M. R.; Geim, A. K. Fine Structure Constant Defines Visual Transparency of Graphene Science 2008, 320, 1308
4. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150
5. 2 Heterostructures for Flexible and Transparent Electronics Nat. Nanotechnol. 2013, 8, 100-103
6. 2 Nat. Nanotechnol. 2014, 9, 111-115
7. 2 Atomic Layers with Chemical Vapor Deposition Adv. Mater. 2012, 24, 2320-2325
8. Li, L.; Yu, Y.; Ye, G. J.; Ge, Q.; Ou, X.; Wu, H.; Feng, D.; Chen, X. H.; Zhang, Y. Black Phosphorus Field-Effect Transistors Nat. Nanotechnol. 2014, 9, 372-377
9. Xia, F.; Wang, H.; Jia, Y. Rediscovering Black Phosphorus as an Anisotropic Layered Material for Optoelectronics and Electronics Nat. Commun. 2014, 5, 4458
10. 7@Black Phosphorus: An Easy Access to Black Phosphorus Inorg. Chem. 2007, 46, 4028-4035
11. Tsai, H. S.; Lai, C. C.; Medina, H.; Lin, S. M.; Shih, Y. C.; Chen, Y. Z.; Liang, J. H.; Chueh, Y. L. Scalable Graphene Synthesised by Plasma-Assisted Selective Reaction on Silicon Carbide for Device Applications Nanoscale 2014, 6, 13861-13869
12. Berger, L. I. Semiconductor Materials; CRC Press: Boca Raton, FL, 1996; pp 84.
13. Thurn, Von H.; Krebs, H. Über Struktur und Eigenschaften der Halbmetalle. XXII. Die Kristallstruktur des Hittorfschen Phosphors Acta Crystallogr. 1969, B25, 125-135
14. Curry, R. Hittorf's Metallic Phosphorus of 1865. Lateral Science; 2012; http://lateralscience.blogspot.com/2012/07/main-menu-click-above-p-h-o-s-p-h-o-r-u.html (accessed July 8, 2012).
15. Hittorf, W. Zur Kenntniss des Phosphors Ann. Phys. 1865, 202, 193-228
16. Bhuiyan, A. G.; Hashimoto, A. Yamamoto, Indium Nitride (InN): A Review on Growth, Characterization, and Properties J. Appl. Phys. 2003, 94, 2779-2807
17. Fasol, G.; Cardona, M.; Hönle, W.; von Schnering, H. G. Lattice Dynamics of Hittorf's Phosphorus and Identification of Structural Groups and Defects in Amorphous Red Phosphorus Solid State Commun. 1984, 52, 307-310
18. +-Implanted InP Assessed by Raman Spectroscopy Nucl. Instr. Meth. Phys. Res. B 2001, 175-177, 252-256
19. Takagi, S.; Irisawa, T.; Tezuka, T.; Numata, T.; Nakaharai, S.; Hirashita, N.; Moriyama, Y.; Usuda, K.; Toyoda, E.; Dissanayake, S.; Shichijo, M.; Nakane, R.; Sugahara, S.; Takenaka, M.; Sugiyama, N. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance IEEE Trans. Electron Devices 2008, 55, 21-39