Lattice recovery by rapid thermal annealing in Mg+-implanted InP assessed by Raman spectroscopy

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 252-256

  Marcos, B ^a   Ibaez J ^a   Cusco R ^a   Martinez F L ^b   Gonzalez Diaz G ^b   Artus L ^a  

^a INSTITUTE OF EARTH SCIENCES JAUME ALMERA   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Ion beam implantation; Lattice damage; Raman scattering

Indexed keywords

CHEMICAL ACTIVATION; CRYSTAL LATTICES; ION BEAMS; ION IMPLANTATION; MAGNESIUM PRINTING PLATES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM PHOSPHIDE;

LATTICE DAMAGE; LATTICE RECOVERY;

SEMICONDUCTING FILMS;

EID: 0035303244     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00530-9     Document Type: Conference Paper

References (18)